Patents by Inventor KAILAS SENAN

KAILAS SENAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND APPARATUS FOR CALCULATING THE JUNCTION TEMPERATURE OF AN RF POWER MOSFET
    Publication number: 20170030778
    Abstract: There are provided a method and apparatus for calculating the junction temperature of an RF power MOSFET. The method for calculating the junction temperature of an RF power MOSFET, comprising steps of: establishing a transient thermal impedance model of the RF power MOSFET in analog domain; calculating a transfer function in time domain of the transient thermal impedance model using bilinear transformation; establishing a junction temperature compensation model in digital domain based on the transfer function in time domain of the transient thermal impedance model with a sampling frequency and a type of 2nd order IIR filter structure; and calculating the junction temperature of the RF power MOSFET by inputting an actual input to the junction temperature compensation model. The present invention improves accuracy in determining the junction temperature of an RF power MOSFET.
    Type: Application
    Filed: March 3, 2015
    Publication date: February 2, 2017
    Inventors: KEQIU ZENG, TAO WANG, KAILAS SENAN