Patents by Inventor Kailash Mishra
Kailash Mishra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160111608Abstract: Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.Type: ApplicationFiled: November 4, 2015Publication date: April 21, 2016Applicant: OSRAM SYLVANIA INC.Inventors: Darshan Kundaliya, Kailash Mishra
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Patent number: 9206958Abstract: Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.Type: GrantFiled: September 16, 2013Date of Patent: December 8, 2015Assignee: OSRAM SYLVANIA Inc.Inventors: Darshan Kundaliya, Kailash Mishra
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Publication number: 20150078010Abstract: Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.Type: ApplicationFiled: September 16, 2013Publication date: March 19, 2015Applicant: OSRAM SYLVANIA INC.Inventors: Darshan Kundaliya, Kailash Mishra
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Patent number: 8937332Abstract: A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.Type: GrantFiled: January 31, 2012Date of Patent: January 20, 2015Assignee: OSRAM SYLVANIA Inc.Inventors: Darshan Kundaliya, Madis Raukas, Adam M. Scotch, David Hamby, Kailash Mishra, Matthew Stough
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Publication number: 20130313603Abstract: A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.Type: ApplicationFiled: January 31, 2012Publication date: November 28, 2013Applicant: OSRAM SYLVANIA INC.Inventors: Darshan Kundaliya, Madis Raukas, Adam M. Scotch, David Hamby, Kailash Mishra, Matthew Stough
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Publication number: 20130001597Abstract: There is herein described a lighting device including at least one LED and a wavelength converter. The wavelength converter includes a supporting plate, a plurality of first host sites and a plurality of second host site. The supporting plate is disposed over the LED. The plurality of the first host sites is disposed directly on a surface of the supporting plate. Each of the plurality of first host sites consists essentially of a first matrix and a plurality of first quantum dots dispersed in the first matrix. The first quantum dots have a first common emission peak wavelength. The plurality of the second host sites is disposed directly on the surface of the supporting plate. Each of the plurality of second host sites consists essentially of a second matrix and a plurality of second quantum dots dispersed in the second matrix. The second quantum dots have a second common emission peak wavelength. The second common emission peak wavelength is different from the first common emission peak wavelength.Type: ApplicationFiled: June 28, 2011Publication date: January 3, 2013Applicant: OSRAM SYLVANIA INC.Inventors: Maria J. Anc, Kailash Mishra
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Patent number: 7935325Abstract: Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.Type: GrantFiled: December 20, 2006Date of Patent: May 3, 2011Assignees: OSRAM SYLVANIA Inc., The Regents of the University of CaliforniaInventors: Bing Han, Jonathan H. Tao, Madis Raukas, Keith A. Klinedinst, Jan B. Talbot, Kailash A. Mishra
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Publication number: 20090252667Abstract: Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.Type: ApplicationFiled: December 20, 2006Publication date: October 8, 2009Applicant: OSRAM SYLVANIA, INC.Inventors: Bing Han, Jonathan H. Tao, Madis Raukas, Keith A. Klinedinst, Jan B. Talbot, Kailash A. Mishra
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Publication number: 20060138930Abstract: A blue-enriched incandescent lamp having on the interior surface of its light transmissive glass envelope a coating in accordance with an aspect of the invention. The coating contains a phosphor that is energized by the ultraviolet/violet emission (<420 nm) from the hot filament causing it to emit radiation in the range of 420 to 490 nm. In a preferred embodiment of the invention, the coating contains a europium-activated barium magnesium aluminate phosphor and a blue pigment.Type: ApplicationFiled: December 28, 2004Publication date: June 29, 2006Applicant: OSRAM SYLVANIA INC.Inventors: Madis Raukas, Kailash Mishra
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Publication number: 20050253162Abstract: A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.Type: ApplicationFiled: August 2, 2005Publication date: November 17, 2005Applicant: OSRAM SYLVANIA INC.Inventor: Kailash Mishra
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Publication number: 20050212435Abstract: A ceramic discharge vessel is provided wherein the vessel comprises a hollow body for enclosing a discharge and the hollow body is made of a polycrystalline dysprosium oxide containing a luminescent dopant that emits one or more visible light wavelengths when stimulated by radiation generated by the discharge. Preferably, the polycrystalline dysprosium oxide has been doped with one or more of europium, cerium, or terbium in an amount from about 0.1 to about 10 percent by weight on an oxide basis.Type: ApplicationFiled: June 24, 2005Publication date: September 29, 2005Applicant: OSRAM SYLVANIA INC.Inventors: George Wei, Walter Lapatovich, Joanne Browne, Kailash Mishra, Madis Raukas
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Publication number: 20050064250Abstract: A europium-activated barium aluminate phosphor is described wherein the phosphor is doped with tetravalent ions of Hf, Zr, or Si. Preferably, the phosphor is represented by (Ba1-xEux)MgAl10O17: (Hf, Zr, Si)y where 0.05?x?0.25 and 0<y?0.05. The tetravalent dopant ions are shown to enhance the stability of the phosphor in UV/VUV applications.Type: ApplicationFiled: September 20, 2003Publication date: March 24, 2005Inventors: Madis Raukas, Kailash Mishra, Robert McSweeney