Abstract: A signal transmission method and apparatus, a device, and a system are provided. The signal transmission method includes: sending first signaling to a receive end device, where the first signaling is used to indicate configuration information of a first signal; and the configuration information includes at least one of the following: first information, a signal waveform, a target measurement quantity, or signal sequence information, where the first information is used to indicate a signal type of the first signal, or indicate whether the receive end device detects communication information of the first signal; and the target measurement quantity includes a measurement quantity to be measured or fed back by the receive end device.

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.

Abstract: The present disclosure discloses a method and apparatus for fast inverse discrete cosine transform and a video coding/decoding method and framework. By recording positions of non-zero coefficients in a transform unit during a procedure of performing inverse quantization scanning to the coefficients, determining a distribution pattern of non-zero coefficients of the transform unit based on the positions of non-zero coefficients, and further selecting an inverse discrete cosine transform function corresponding to the non-zero coefficient distribution pattern, and then performing inverse cosine transform to the function, the technical solutions of the present disclosure need not compute the zero coefficients, which thus improves the overall speed of an algorithm; because the positions of non-zero coefficients have been recorded during the procedure of performing inverse quantization scanning to the coefficients, the complexity of the algorithm is lowered.