Patents by Inventor Kailiang HUANG

Kailiang HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240121942
    Abstract: A memory comprises a substrate and a plurality of storage units formed on the substrate. Each of the storage units includes a transistor and a capacitor electrically connected to the transistor. The transistor includes a gate, a semiconductor layer, a first electrode, a second electrode, and a gate dielectric layer. The first electrode and the second electrode are arranged in a first direction. The gate is located between the first electrode and the second electrode. The semiconductor layer is located on one of two opposite sides of the gate in a second direction. The semiconductor layer is electrically connected separately to the first electrode and the second electrode, the gate and the semiconductor layer are isolated from each other by the gate dielectric layer, and the second direction is a direction parallel to the substrate.
    Type: Application
    Filed: December 16, 2023
    Publication date: April 11, 2024
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Weiliang Jing, Kailiang Huang, Junxiao Feng, Zhengbo Wang
  • Publication number: 20230371229
    Abstract: A thin-film transistor (TFT) includes a gate, a first electrode, a second electrode, a first dielectric layer, a second dielectric layer, and a semiconductor layer. The gate includes a gate base located at a top portion and a gate body extending from the gate base to a bottom portion. The first electrode is located at the bottom portion. The second electrode is located between the first electrode and the gate base. The first dielectric layer is disposed between the second electrode and the first electrode, and the first dielectric layer is configured to separate the first electrode from the second electrode. The second dielectric layer covers a surface of the gate base and a surface of the gate body. The semiconductor layer is disposed along a side surface of the gate body, and the second dielectric layer separates the semiconductor layer from the gate.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Inventors: Weiliang Jing, Kailiang Huang, Junxiao Feng, Zhengbo Wang
  • Patent number: 11193704
    Abstract: Provided are a control method of a heat pump system and a heat pump system. The heat pump system includes a throttling element and a four-way valve. The four-way valve has a first state in a case that the heat pump system operates for refrigerating and a second state in a case that the heat pump system operates for heating. The control method includes that: before the four-way valve is switched from the first state to the second state, A is compared with B, and switching of the state of the four-way valve is controlled and the opening degree of the throttling element is adjusted according to the comparison result, or switching of the state of the four-way valve is controlled according to the comparison result, or the opening degree of the throttling element is adjusted according to the comparison result.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: December 7, 2021
    Assignees: Gree Electric Appliances (Wuhan) Co., Ltd, Gree Electric Appliances, Inc. of Zhuhai
    Inventors: Hailing Zhong, Qi Cheng, Kailiang Huang, Yang Liu, Siyuan Liu, Min Li, Puzhong Wang
  • Publication number: 20210164714
    Abstract: Provided are a control method of a heat pump system and a heat pump system. The heat pump system includes a throttling element and a four-way valve. The four-way valve has a first state in a case that the heat pump system operates for refrigerating and a second state in a case that the heat pump system operates for heating. The control method includes that: before the four-way valve is switched from the first state to the second state, A is compared with B, and switching of the state of the four-way valve is controlled and the opening degree of the throttling element is adjusted according to the comparison result, or switching of the state of the four-way valve is controlled according to the comparison result, or the opening degree of the throttling element is adjusted according to the comparison result.
    Type: Application
    Filed: August 2, 2018
    Publication date: June 3, 2021
    Inventors: Hailing ZHONG, Qi CHENG, Kailiang HUANG, Yang LIU, Siyuan LIU, Min LI, Puzhong WANG