Abstract: The present disclosure relates to the technical field of semiconductors and provides a semiconductor structure, a method of forming same, and a memory. The method of forming a semiconductor structure of the present disclosure includes: providing a carrier board; forming a chipset on one side of the carrier board, where the chipset includes multiple chips stacked in a direction perpendicular to the carrier board; where among multiple chips, an orthographic projection of a chip closer to the carrier board on the carrier board is within an orthographic projection of a chip farthest from the carrier board on the carrier board; forming an insulating dielectric layer covering the chipset; and performing a grinding process to expose a predetermined surface of the chip farthest from the carrier board outside the insulating dielectric layer.

Abstract: A semiconductor structure includes a base, a chipset and a heat conduction adjusting layer. The chipset is disposed at one side of the base and includes multiple chip units arranged at intervals along a direction perpendicular to the base. Each of the chip units includes a substrate and a circuit module disposed on a surface of the substrate. The substrate includes a circuit interconnection region and a non-circuit interconnection region distributed adjacently. The circuit module is disposed on a surface of the circuit interconnection region, and adjacent chip units are electrically connected by the circuit module. The heat conduction adjusting layer is in contact with at least one of the substrates for reducing the difference of heat conduction rates between surfaces of the substrates.

Abstract: A semiconductor structure includes a carrier structure, and a stack structure located on the carrier structure. The stack structure includes at least one heat dissipation panel and at least one die module stacked onto one another, and the at least one die module includes at least one die. An area of an orthographic projection of the at least one heat dissipation panel on the carrier structure is greater than an area of an orthographic projection of the at least one die module on the carrier structure.

Abstract: A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor device are provided. The semiconductor structure comprises: a logic die provided with a first wireless communication component; a plurality of memory components arrayed in a first direction and stacked on an upper surface of the logic die, the first direction being parallel to the upper surface of the logic die; and a first adhesive film arranged between any two adjacent memory components of the plurality of memory components and adhered to the any two adjacent memory components. Each of the plurality of memory components includes a plurality of memory dies arrayed in the first direction. Each of the plurality of memory dies is provided with a second wireless communication component. The second wireless communication component is in wireless communication with the first wireless communication component.

Abstract: Embodiments provide a semiconductor structure and a fabricating method. The semiconductor structure includes: a substrate having a power supply port; a memory module positioned on an upper surface of the substrate, where the memory module includes memory chips stacked in a first direction, the first direction is parallel to the upper surface of the substrate, each of the memory chips has a power supply signal line, at least one of the memory chips has a power supply wiring layer, the power supply signal line is electrically connected to the power supply wiring layer, the power supply wiring layer is positioned in the memory module, an end surface of the power supply wiring layer far away from the substrate is exposed by the memory module, and a solder bump is further provided on the end surface; and a lead frame electrically connected to the solder bump and the power supply port.

Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a base and a plurality of semiconductor die sets located on a surface of the base and stacked in sequence along a first direction. The plurality of the semiconductor die sets are respectively connected to different ranks, and the plurality of semiconductor die sets are all electrically connected to the base. The first direction is a thickness direction of the base. Each of the semiconductor die sets includes a first die and a second die bonded face-to-face. The first die and the second die are connected to a same rank.

Abstract: A semiconductor package structure includes: a first base plate; a first semiconductor chip connected to the first base plate; a second semiconductor chip stacking structure including at least one first chip stacking structure and at least one second chip stacking structure; and a plurality of second base plates. The first and second chip stacking structures are arranged side-by-side on the first semiconductor chip in a first direction, a plurality of second conductive bumps are formed on sides of the first and second chip stacking structure that is away from each other in the first direction, the first direction being parallel to a plane where the first base plate is located. A signal line in each second base plate is connected to the second conductive bumps. The second base plates are connected to the first base plate in a direction perpendicular to the plane where the first base plate is located.

Abstract: A semiconductor structure includes a substrate, a chip set, a conductive structure and a wire. The substrate includes an external circuit. The chip set is disposed at one side of the substrate and includes a plurality of chip units that are spaced in a direction perpendicular to the substrate, and the chip units are electrically connected to each other. The conductive structure is disposed on at least a surface of at least one of the chip units. One end of the wire is connected to the conductive structure, and the other end extends outside of the chip units and is connected to the external circuit.

Abstract: A semiconductor package structure includes: a first substrate; a first semiconductor die connected to the first substrate; a second semiconductor die stack structure located on the first semiconductor die, the second semiconductor die stack structure includes a plurality of second semiconductor dies sequentially stacked onto one another in a first direction, a plurality of second conductive bumps being formed on a side of the second semiconductor die stack structure in the first direction, in which the first direction is a direction parallel to a plane where the first substrate is located; and a second substrate, a signal line in the second substrate being connected to the plurality of second conductive bumps, the second substrate being connected to the first substrate in a direction perpendicular to the plane where the first substrate is located.

Abstract: A semiconductor structure, a method for manufacturing same, and a semiconductor device are provided. The semiconductor structure includes: a substrate having a groove and power supply pins; a storage module located in the groove; in which the storage module includes a plurality of storage chips stacked in a first direction, the first direction being parallel to the bottom surface of the groove; power supply signal lines being provided in each of the storage chips, and at least one of the plurality of storage chips having a power supply wiring layer electrically connected to the power supply signal lines; and conductive parts connected with the power supply wiring layer and the power supply pins.

Abstract: Provided are semiconductor package structure and a method for manufacturing the same. The semiconductor package structure includes: a first base; a first semiconductor chip connected to the first base; a second semiconductor chip stack structure located on the first semiconductor chip, the second semiconductor chip stack structure including a plurality of second semiconductor chips stacked in sequence in a first direction, the second semiconductor chip stack structure being provided with a plurality of first leads on an outermost side of the second semiconductor chips in the first direction, in which the first direction is a direction parallel to a plane of the first base; and at least one second base, signal lines in the at least one second base being connected to the first leads, the at least one second base being connected to the first base in a direction perpendicular to the plane of the first base.

Abstract: Embodiments provide a fabricating method, a semiconductor structure, and a semiconductor device. The method includes: providing a plurality of chips, each of the chips includes an element region and a scribe line region arranged in a first direction; stacking the chips to form a chip module, where a stacking direction of the chips is a second direction perpendicular to the first direction, the element regions of the chips are overlapped with each other, and the scribe line regions of the chips are overlapped with each other; planarizing a side surface of each of the scribe line regions distant from the element region after the chip module is formed, to remove at least part of the scribe line regions and expose the power supply wiring layer; and forming a pad on the side surface planarized, where the pad is connected to the power supply wiring layer.

Abstract: Provided are a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a base having power ports, a memory module located on the base and including a plurality of memory dies stacked along a first direction, in which each of the memory dies has power-supply signal wires, at least one of the memory dies has a power-supply distribution layer, the power-supply signal wires are electrically connected with the power-supply distribution layer, the power-supply distribution layer includes a first distribution layer and a second distribution layer connected with each other, a plane of the first distribution layer is perpendicular to an upper surface of the base, the second distribution layer is located on a surface of the memory die away from the base; wire bonds connected with the second distribution layer; at least one lead frame connected with the wire bonds and the power ports.

Abstract: A semiconductor package structure and a manufacturing method thereof are provided. The semiconductor package structure includes a first semiconductor die and a second semiconductor die stack structure. A first wireless communication portion is formed in the first semiconductor die. The second semiconductor die stack structure includes a first die stack structure and a second die stack structure. A second wireless communication portion and a third wireless communication portion are respectively formed in two sides, along a second direction, of the first die stack structure. A fourth wireless communication portion is formed in one side, opposite to the first die stack structure, of the second die stack structure. The first direction is a direction parallel to a plane of the first semiconductor die, and the second direction is a direction perpendicular to the plane of the first semiconductor die.

Abstract: A semiconductor structure and semiconductor device are provided. The semiconductor structure includes a plurality of layers of memory modules stacked on an upper surface of the logic chip in a first direction which is perpendicular to the upper surface of the logic chip. Each storage module includes a plurality of memory chips stacked in a second direction which is parallel to the upper surface. Each memory chip in a top layer includes one second wireless communication part; and each memory chip in a non-top layer includes two second wireless communication parts arranged in the first direction and a wired communication part connected between the two second wireless communication parts. Two adjacent second wireless communication parts located on different memory chips in the first direction communicate with each other wirelessly; and each first wireless communication part communicates wirelessly with a closest second wireless communication part in a bottom memory chip.

Abstract: The present disclosure relates to the technical field of semiconductor packaging, and discloses a semiconductor structure and a method for forming the same. The method includes: providing a chip, the chip having interconnect structures on its surface, the top of the interconnect structures having an exposed fusible portion; providing a substrate, the substrate having conductive structures on its surface; patterning the conductive structures so that edges of the conductive structures have protrusions; combining the chip with the substrate. The new structure design avoids the product failure of the chip and the semiconductor substrate in the molding stage, and also strengthens the weld metal bonding force between the conductive structures and the substrate.