Abstract: In one aspect, a magnetic tunnel junction (MTJ) device includes an MTJ element including a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer separating the magnetic reference layer and the magnetic free layer. Further, a spin-orbit torque (SOT) layer structure is arranged below the MTJ element and configured to provide a write current switching a magnetization direction of the magnetic free layer through SOT. The SOT layer structure includes a heavy metal layer and a magnetic layer. The magnetic layer is arranged below the heavy metal layer and configured to induce a magnetic field in the magnetic free layer in a direction of the write current through the SOT layer structure, thereby promoting deterministic switching of the magnetization of the magnetic free layer.

Abstract: A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a first pinning region 106 having a first fixed magnetization direction; a second pinning region 108 having a second fixed magnetization direction which is in a different direction to the first fixed magnetization direction; a magnetic layer 102 having a switchable magnetization direction; and a spin source layer 104 configured to generate a spin current for propagating a domain wall between the first and second pinning regions 106, 108 to switch the switchable magnetization direction of the magnetic layer 102 between the first and second fixed magnetization directions.

Abstract: A voltage controlled magnetic random memory unit, a memory, and a logic device thereof. The memory unit includes: a ferroelectric layer applied with a first positive or negative voltage to control a directional switching of magnetization; a spin-orbit coupling layer located above the ferroelectric layer and applied with a second voltage to produce a spin current in a direction perpendicular to the spin-orbit coupling layer; a first magnetic layer located above the spin-orbit coupling layer, wherein, the spin current induces a random up and down magnetic switching of the first magnetic layer. The spin current may induce a directional switching of the first magnetic layer in conjunction with the first voltage applied to the ferroelectric layer.

Abstract: A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a first pinning region 106 having a first fixed magnetization direction; a second pinning region 108 having a second fixed magnetization direction which is in a different direction to the first fixed magnetization direction; a magnetic layer 102 having a switchable magnetization direction; and a spin source layer 104 configured to generate a spin current for propagating a domain wall between the first and second pinning regions 106, 108 to switch the switchable magnetization direction of the magnetic layer 102 between the first and second fixed magnetization directions.

Abstract: Described is a spin torque device, and a spintronics device Incorporating the spin torque device. The spin torque device comprises a magnetic layer having a switchable magnetisation direction along a first axis, and a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis. Electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the magnetic layer to produce spin torque to switch the magnetisation direction.

Abstract: A voltage controlled magnetic random memory unit, a memory, and a logic device thereof. The memory unit includes: a ferroelectric layer applied with a first positive or negative voltage to control a directional switching of magnetization; a spin-orbit coupling layer located above the ferroelectric layer and applied with a second voltage to produce a spin current in a direction perpendicular to the spin-orbit coupling layer; a first magnetic layer located above the spin-orbit coupling layer, wherein, the spin current induces a random up and down magnetic switching of the first magnetic layer. The spin current may induce a directional switching of the first magnetic layer in conjunction with the first voltage applied to the ferroelectric layer.