Abstract: The present invention discloses a JFET device, whose drift region is composed of a first deep well region doped with the second conduction type that is formed on a substrate doped with the first conduction type; the body region includes a second deep well region and channel region doped with the second conduction type; the channel region, located between the first deep well region and the second deep well region, includes two or more third deep well regions doped with the second conduction type that are arranged at equal intervals, with the doping impurities of the spacing region between the adjacent third deep well regions composed of the diffusion impurities of the adjacent third deep well regions; the processing conditions are the same for the three deep well regions. Regulating the pinch-off voltage of the JFET device by regulating the impurity concentration of the deep well region, and the width and number of the respective spacing regions.