Abstract: A light detection element according to the present disclosure includes a plurality of photoelectric converters, a color splitter layer, and a plurality of condensers. The plurality of photoelectric converters are disposed side by side in a matrix in a semiconductor layer. The color splitter layer is disposed on a light incident side with respect to the plurality of photoelectric converters, and includes a low refractive index layer and a plurality of columnar high refractive index portions. The plurality of condensers are disposed on the light incident side with respect to the color splitter layer, and condenses incident light to the corresponding high refractive index portions.

Abstract: A light detection device comprises a pixel array having a plurality of pixels. At least one of the plurality of pixels includes a photoelectric conversion region configured to perform photoelectric conversion, a light guide region including first nanostructures that guide light to the photoelectric conversion region, and a refraction structure arranged between the light guide region and the photoelectric conversion region and that causes light exiting the light guide region to refract in a refraction direction.

Abstract: A light detecting device comprises a plurality of pixels comprising a first pixel group that senses light in a first wavelength range, a second pixel group that senses light in a second wavelength range different than the first wavelength range, and a first layer comprising first nanostructures positioned over the first pixel group to redirect light. The second pixel group is disposed amongst pixels of the first pixel group.

Abstract: A light receiving device according to one embodiment of the present disclosure is a light receiving device including a plurality of pixels, each of the pixels including: a multifocal optical member having a plurality of optical axes; a semiconductor layer that receives light that is in a predetermined wavelength range and has passed through the optical member, to perform photoelectric conversion; and a transmission suppressor that suppresses, on a first surface, on a side opposite to a light incident side, of the semiconductor layer, transmission of the light through the semiconductor layer.

Abstract: Collapses of pillars are suppressed. An optical detecting device includes a pixel array section having multiple pixels that are arranged two-dimensionally therein. Further, each pixel of the multiple pixels includes a photoelectric converting section provided on a semiconductor layer and a metasurface structure that is arranged on a light incidence surface side of the semiconductor layer and that guides incident light to the photoelectric converting section. Moreover, the metasurface structure includes multiple pillars that are arranged at distances therebetween which are shorter than a wavelength of the incident light and a transparent support that connects and supports at least some of the multiple pillars.

Abstract: A photodetector that makes it possible to attempt to improve optical characteristics in terms of oblique incidence of light at angle-of-view ends is provided. A photodetector includes multiple pixels arranged in a matrix on a semiconductor substrate. Each of the multiple pixels includes a photoelectric converting section that photo-electrically converts incident light, and a deflecting section that is arranged on a light-incidence-surface side of the photoelectric converting section, and has multiple pillars with different thicknesses, pitches, or shapes in the pixel. The pillars guide an incident principal ray that is incident at a different angle for each image height to the photoelectric converting section at a prism angle at which light is bent relative to the principal ray differently for each pixel.

Abstract: A light detection device comprises a pixel array including a plurality of pixel units. At least one pixel unit of the plurality of pixel units includes a photoelectric conversion region and a light guide region that guides light to the photoelectric conversion region. For each pixel unit of the at least one pixel unit, the light guide region includes nanostructures that direct light to the photoelectric conversion region, and the nanostructures have at least one characteristic that varies based on a position of the pixel unit in the pixel array.

Abstract: A light detecting device comprises a plurality of pixels that include first pixels that sense light in a first wavelength range, and a second pixel that senses light in a second wavelength range different than the first wavelength range. The second pixel is surrounded by six pixels of the first pixels. The light detecting device comprises first nanostructures that redirect light incident to the first pixels.

Abstract: A technique for achieving spectral separation. A light detection device includes a semiconductor layer with a photoelectric conversion unit is provided for each of the pixels, and an optical filter layer on a light incident surface side that includes a first filter part and a second filter part for each of the pixels. Each of the first and second filter parts includes: a first metal film on the light incident surface side of the semiconductor layer; a first dielectric film and a second dielectric film having different refractive indices that are arranged in a thickness direction of the semiconductor layer side by side, on a side of the first metal film opposite the semiconductor layer; and a second metal film on a side of the dielectric films opposite the first metal film. A ratio of thicknesses between the dielectric films is different in the different filter parts.

Abstract: An imaging device and an electronic apparatus that make it possible to reduce color mixture between pixels are provided. An imaging device of an embodiment of the present disclosure includes: a plurality of pixels (PX) each having a stacked structure in which a photoelectric conversion section (PD) including a light entrance surface, a first light transmissive film provided to face the light entrance surface and having a first refractive index (nCF), and a second light transmissive film having a second refractive index (n18) higher than the first refractive index are stacked in order in a stacking direction, the plurality of pixels being arranged in an in-plane direction orthogonal to the stacking direction; and a first pixel separation section provided between a plurality of the first light transmissive films adjacent to each other in the in-plane direction, and having a third refractive index (n13) lower than the first refractive index.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface that are opposed to each other, and including a plurality of pixels and a plurality of photoelectric converters, the plurality of pixels disposed in a matrix, and the plurality of photoelectric converters that generates, through photoelectric conversion, an electric charge corresponding to an amount of received light incident from a subject without passing through an on-chip lens for each of the pixels; a plurality of color filters provided one for each of the plurality of pixels on side of the first surface; a first protective film that covers top surfaces and side surfaces of the plurality of color filters; a gap section provided between the plurality of respective color filters; and a light-blocking section provided at a bottom of the gap section.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first filter that allows light of a first wavelength band to pass therethrough; a first photoelectric converter that photoelectrically converts the light of the first wavelength band having passed through the first filter; a second filter that is provided adjacent to the first filter, and allows light of a second wavelength band to pass therethrough; and a second photoelectric converter that photoelectrically converts the light of the second wavelength band having passed through the second filter. A refractive index of the first filter for the light of the first wavelength band is higher than a refractive index of the second filter for the light of the first wavelength band.

Abstract: An imaging device according to one embodiment of the present disclosure includes a first filter having a first refractive index for entering light, a first photoelectric conversion section that performs photoelectric conversion on light transmitted through the first filter, a second filter that has a second refractive index lower than the first refractive index for entering light and is adjacent to the first filter, a second photoelectric conversion section that performs photoelectric conversion on light transmitted through the second filter, a first medium that is provided on an opposite side of the first photoelectric conversion section as viewed from the first filter and has a third refractive index for entering light, and a second medium that is provided on an opposite side of the second photoelectric conversion section as viewed from the second filter and has a fourth refractive index higher than the third refractive index for entering light.

Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and electronic equipment capable of further improving performance. The solid-state imaging element includes a semiconductor substrate having a photoelectric conversion section provided for each pixel and a filter layer provided on a light-receiving side of the semiconductor substrate. In the filter layer, a filter whose surface shape is formed in a convex shape is provided for each pixel, and an inter-pixel light shielding section including a low-refractive index material having the refractive index lower than that of the filter is provided between the pixels. Then, the surfaces of the filters are formed in a convex shape by forming the filters on base materials that are provided in a pattern smaller than a pixel pitch by coating such that the filters are convex relative to an insulating film formed on the surface of the semiconductor substrate. The present technology is applicable, for example, to CMOS image sensors.

Abstract: Provided is an imaging device capable of further suppressing color mixing between pixels. The imaging device includes: a semiconductor substrate provided with a photoelectric conversion unit for each of pixels two-dimensionally arranged; a color filter provided for each of the pixels on the semiconductor substrate; an intermediate layer provided between the semiconductor substrate and the color filter; and a low refraction region provided between the pixels by separating at least the color filter and the intermediate layer for each of the pixels, the low refraction region having a refractive index lower than a refractive index of the color filter.

Abstract: A solid-state imaging device according to the present disclosure includes a semiconductor layer, a plurality of on-chip lenses, a first separation region, and a second separation region. The semiconductor layer is provided with a plurality of photoelectric conversion units. The plurality of on-chip lenses causes light (L) to be incident on the corresponding photoelectric conversion units. The first separation region separates the plurality of photoelectric conversion units on which the light (L) is incident through the same on-chip lens. The second separation region separates the plurality of photoelectric conversion units on which light is incident through the different on-chip lenses. In addition, the first separation region has a higher refractive index than the second separation region.

Abstract: An imaging device and an electronic apparatus that make it possible to reduce color mixture between pixels are provided. An imaging device of an embodiment of the present disclosure includes: a plurality of pixels (PX) each having a stacked structure in which a photoelectric conversion section (PD) including a light entrance surface, a first light transmissive film provided to face the light entrance surface and having a first refractive index (nCF), and a second light transmissive film having a second refractive index (n18) higher than the first refractive index are stacked in order in a stacking direction, the plurality of pixels being arranged in an in-plane direction orthogonal to the stacking direction; and a first pixel separation section provided between a plurality of the first light transmissive films adjacent to each other in the in-plane direction, and having a third refractive index (n13) lower than the first refractive index.

Abstract: According to an embodiment, a defect detection method includes inspecting an inspection target, classifying the inspection target by a characteristic quantity of a signal in the inspection of the inspection target, producing an in-plane map of the inspection target based on the characteristic quantities of the signals in the inspection of the inspection target, calculating a characteristic quantity of an in-plane map of the inspection target, and classifying defects of the inspection target in accordance with an agreement rate between the in-plane map characteristic quantity of the inspection target and an in-plane map characteristic quantity of a reference target.