Patents by Inventor Kakimoto Masaaki

Kakimoto Masaaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same
    Patent number: 7906206
    Abstract: An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.
    Type: Grant
    Filed: August 16, 2005
    Date of Patent: March 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Jin Park, Hyun Jung Park, Bon Won Koo, Sang Yoon Lee, Lyong Sun Pu, Kakimoto Masaaki
  • Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same
    Publication number: 20060180809
    Abstract: An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.
    Type: Application
    Filed: August 16, 2005
    Publication date: August 17, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jong Park, Hyun Park, Bon Koo, Sang Lee, Lyong Pu, Kakimoto Masaaki