Abstract: A method for manufacturing a solid state device with a self-forming nanogap includes patterning a first metallic layer (M1) to form a first electrode on a substrate; depositing a self-assembling monolayer, SAM, layer over and around the first electrode; forming a second metallic layer (M2) in contact with the SAM layer and the substrate; and touchlessly removing parts of the second metallic layer (M2) that is formed directly above the SAM layer, to form a second electrode, and a nanogap between the first electrode and the second electrode.

Abstract: A method for manufacturing a soft stamp includes providing a substrate having a first electrode and a second electrode, the second electrode being formed at a distance less than 100 nm from the first electrode so that a nanogap Ng is formed between the first and second electrodes; pouring a curable substance over the first and second electrodes and into the nanogap Ng; curing the curable substance to form a soft stamp; and removing the soft stamp from the first and second electrodes. The soft stamp has a nano-feature having a size less than 100 nm.