Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Abstract: The invention relates to controlling of characteristics of radiation patterns in wireless telecommunications system, where radiation patterns are provided by antenna arrays, each antenna array comprising at least two independent antenna units, each antenna unit being associated with an antenna-unit-specific antenna signal. A control circuit for controlling the characteristics of radiation patterns comprises an antenna signal amplitude adjuster for adjusting a relative amplitude of at least two antenna-unit-specific antenna signals as a function of a phase shift between at least two radio frequency signals inputted into the antenna signal amplitude adjuster. The circuit further comprises an adjustable phase shifter for adjusting the phase shift between the at least two radio frequency signals inputted into the antenna signal amplitude adjuster.

Abstract: The invention relates to controlling of characteristics of radiation patterns in wireless telecommunications system, where radiation patterns are provided by antenna arrays, each antenna array comprising at least two independent antenna units, each antenna unit being associated with an antenna-unit-specific antenna signal. A control circuit for controlling the characteristics of radiation patterns comprises an antenna signal amplitude adjuster for adjusting a relative amplitude of at least two antenna-unit-specific antenna signals as a function of a phase shift between at least two radio frequency signals inputted into the antenna signal amplitude adjuster. The circuit further comprises an adjustable phase shifter for adjusting the phase shift between the at least two radio frequency signals inputted into the antenna signal amplitude adjuster.