Patents by Inventor Kalidas Chatty

Kalidas Chatty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices comprising getter layers and methods of making and using the same
    Patent number: 9035395
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: May 19, 2015
    Assignee: MONOLITH SEMICONDUCTOR, INC.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
  • Semiconductor devices comprising getter layers and methods of making and using the same
    Patent number: 8994118
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: March 31, 2015
    Assignee: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
  • SEMICONDUCTOR DEVICES COMPRISING GETTER LAYERS AND METHODS OF MAKING AND USING THE SAME
    Publication number: 20140299890
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Application
    Filed: May 1, 2014
    Publication date: October 9, 2014
    Applicant: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
  • SEMICONDUCTOR DEVICES COMPRISING GETTER LAYERS AND METHODS OF MAKING AND USING THE SAME
    Publication number: 20140299887
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Application
    Filed: April 4, 2014
    Publication date: October 9, 2014
    Applicant: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty