Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract: A buffer system may have an output for driving a switched load that changes during periods indicated by a switching signal. The buffer system may operate in a closed loop when the switching signal indicates that a load change is not taking place by comparing a signal indicative of the output of the buffer system with a reference voltage. The buffer system may operate in an open loop when the switching signal indicates that a load change is taking place by not comparing signal indicative of the output of the buffer system with the reference voltage. Both the buffer system and the switched load may be on the same chip.

Abstract: A buffer system may have an output for driving a switched load that changes during periods indicated by a switching signal. The buffer system may operate in a closed loop when the switching signal indicates that a load change is not taking place by comparing a signal indicative of the output of the buffer system with a reference voltage. The buffer system may operate in an open loop when the switching signal indicates that a load change is taking place by not comparing signal indicative of the output of the buffer system with the reference voltage. Both the buffer system and the switched load may be on the same chip.

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract: A power control system includes an event data bus configured to carry event information. Several power supply managers are coupled to the same event bus. Each power supply manager has one or more point of load (POL) regulators assigned to it. Each power supply manager communicates event information with other POL power supply managers over the event data bus.

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract: A power control system includes an event data bus configured to carry event information. Several power supply managers are coupled to the same event bus. Each power supply manager has one or more point of load (POL) regulators assigned to it. Each power supply manager communicates event information with other POL power supply managers over the event data bus.

Abstract: An integrated circuit chip includes a window cover over etchant holes in a dielectric layer and over a cavity in the substrate of said integrated circuit chip. The window cover extends at least 400 microns beyond the edge of the cavity. An integrated sensor chip with a sensor cover which extends at least 400 microns beyond the edges of a cavity. A method of forming an integrated sensor chip with a sensor cover which extends at least 400 microns beyond the edge of a cavity.

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.