Abstract: Circuits and methods for controlling electrical coupling by a load switch are disclosed. In an embodiment, the load switch includes a pass element, level-shift circuit and low-resistance active path. The pass element is configured to be coupled to a power supply and a load, and is configured to electrically couple the power supply with the load during ON-state and electrically decouple the power supply from the load during OFF-state. The level-shift circuit includes a first transistor and pull-up resistor and is configured to generate a level-shifted signal in response to an enable signal, and enable the ON-state and the OFF-state of the pass element based on first and second voltages of the level-shifted signal. The low-resistance active path is coupled in parallel with the pull-up resistor for shunting the pull-up resistor in the OFF-state by providing a path for a leakage current of the first transistor in the OFF-state.

Abstract: Circuits and methods for controlling electrical coupling by a load switch are disclosed. In an embodiment, the load switch includes a pass element, level-shift circuit and low-resistance active path. The pass element is configured to be coupled to a power supply and a load, and is configured to electrically couple the power supply with the load during ON-state and electrically decouple the power supply from the load during OFF-state. The level-shift circuit includes a first transistor and pull-up resistor and is configured to generate a level-shifted signal in response to an enable signal, and enable the ON-state and the OFF-state of the pass element based on first and second voltages of the level-shifted signal. The low-resistance active path is coupled in parallel with the pull-up resistor for shunting the pull-up resistor in the OFF-state by providing a path for a leakage current of the first transistor in the OFF-state.

Abstract: A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater.

Abstract: A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater.

Abstract: A method of removing photoresist from a surface during the manufacture of an integrated circuit. Organometallic polymers and monomers are formed during the etch of a hard mask material defining the locations of a metal-bearing film, such as tantalum nitride, when photoresist is used to mask the hard mask etch. These organometallic polymers and monomers as formed are not fully cross-linked. A liquid phase solution of sulfuric acid and hydrogen peroxide used to remove the photoresist also removes these not-fully-cross-linked organometallic polymers and monomers, thus preventing the formation of stubborn contaminants during subsequent high temperature processing.

Abstract: A method of manufacturing an IC that comprises fabricating a semiconductor device. Fabricating the device includes depositing a photoresist layer on a substrate surface and implanting one or more dopant species through openings in the photoresist layer into the substrate, and, into the photoresist layer, thereby forming an implanted photoresist layer. Fabricating the device also includes removing the implanted photoresist layer. Removing the implanted photoresist layer includes exposing the implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone. The mixture is at a temperature of at least about 130°.

Abstract: A semiconductor device including a vertical assembly of semiconductor chips interconnected on a substrate with one or more metal standoffs providing a fixed space between each supporting chip and a next successive vertically stacked chip is described. The device is fabricated by patterning islands of aluminum atop the passivation layer of each supporting chip simultaneously with processing to form bond pad caps. The fabrication process requires no additional cost, and has the advantage of providing standoffs for a plurality of chips by processing in wafer form, thereby avoiding additional assembly costs. Further, the standoffs provide improved thermal dissipation for the device and a uniform, stable bonding surface for wire bonding each of the chips to the substrate.

Abstract: A semiconductor device including a vertical assembly of semiconductor chips interconnected on a substrate with one or more metal standoffs providing a fixed space between each supporting chip and a next successive vertically stacked chip is described. The device is fabricated by patterning islands of aluminum atop the passivation layer of each supporting chip simultaneously with processing to form bond pad caps. The fabrication process requires no additional cost, and has the advantage of providing standoffs for a plurality of chips by processing in wafer form, thereby avoiding additional assembly costs. Further, the standoffs provide improved thermal dissipation for the device and a uniform, stable bonding surface for wire bonding each of the chips to the substrate.