Patents by Inventor Kam Hung Chan
Kam Hung Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240039488Abstract: The present disclosure provides a receiving circuit for adaptive impedance matching and an operating method thereof. The receiving circuit includes: a first amplification module configured to amplify an input signal input from an input end of the first amplification module to generate a first amplified signal; a frequency mixing module, an input end of which is connected to an output end of the first amplification module, and configured to down-convert the first amplified signal to generate a down-converted signal; and a second amplification module, an input end of which is connected to an output end of the frequency mixing module, and configured to amplify the down-converted signal to generate an output signal, wherein the first amplification module includes an active negative feedback structure for providing adaptive impedance matching in a first bandwidth range.Type: ApplicationFiled: April 10, 2023Publication date: February 1, 2024Inventors: Zhongliang Zhou, Yongxue Qian, Xin Huang, Hao Meng, Guangjie Cai, Chun fai Wong, Kam hung Chan, Tai yin Wong
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Patent number: 9638584Abstract: A differential on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output is provided.Type: GrantFiled: August 26, 2014Date of Patent: May 2, 2017Assignee: Hong Kong Applied Science and Technology Research Institute Company LimitedInventors: Chun Fai Wong, Leung Ling (Alan) Pun, Kam Hung Chan, Kwok Kuen (David) Kwong
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Publication number: 20140362887Abstract: A differential on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output is provided.Type: ApplicationFiled: August 26, 2014Publication date: December 11, 2014Inventors: Chun Fai WONG, Leung Ling (Alan) PUN, Kam Hung CHAN, Kwok Kuen (David) KWONG
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Patent number: 8864377Abstract: An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.Type: GrantFiled: March 9, 2012Date of Patent: October 21, 2014Assignee: Hong Kong Applied Science & Technology Research Institute Company LimitedInventors: Chun Fai Wong, Leung Ling (Alan) Pun, Kam Hung Chan, Kwok Kuen (David) Kwong
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Publication number: 20130235903Abstract: An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.Type: ApplicationFiled: March 9, 2012Publication date: September 12, 2013Applicant: Hong Kong Applied Science & Technology Research Institute Company LimitedInventors: Chun Fai WONG, Leung Ling (Alan) PUN, Kam Hung CHAN, Kwok Kuen (David) KWONG
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Patent number: 8258852Abstract: A motor driver circuit for driving the gate node of a high-side driver transistor to a boosted voltage from a charge pump draws little or no static current from the charge pump. The gate node is pulled to the boosted voltage by a p-channel pullup-control transistor that is driven by p-channel transistors that are pumped by capacitors that cut off current flow to ground from the charge pump. An n-channel output-shorting transistor shorts the gate node to the output when the high-side driver is turned off. A coupling capacitor initializes the shorting transistor for each output transition. A p-channel output-sensing transistor generates a feedback to a second stage that drives the coupling capacitor. P-channel diode transistors and an n-channel equalizing transistor control the voltage on the coupling capacitor.Type: GrantFiled: November 18, 2010Date of Patent: September 4, 2012Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.Inventors: Lap Chi David Leung, Yat Tung Lai, Chun Fai Wong, Kam Hung Chan, Kwok Kuen David Kwong
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Publication number: 20120126736Abstract: A motor driver circuit for driving the gate node of a high-side driver transistor to a boosted voltage from a charge pump draws little or no static current from the charge pump. The gate node is pulled to the boosted voltage by a p-channel pullup-control transistor that is driven by p-channel transistors that are pumped by capacitors that cut off current flow to ground from the charge pump. An n-channel output-shorting transistor shorts the gate node to the output when the high-side driver is turned off. A coupling capacitor initializes the shorting transistor for each output transition. A p-channel output-sensing transistor generates a feedback to a second stage that drives the coupling capacitor. P-channel diode transistors and an n-channel equalizing transistor control the voltage on the coupling capacitor.Type: ApplicationFiled: November 18, 2010Publication date: May 24, 2012Applicant: Hong Kong Applied Science & Technology Research Institute Company LimitedInventors: Lap Chi (David) LEUNG, Yat Tung LAI, Chun Fai WONG, Kam Hung CHAN, Kwok Kuen KWONG
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Patent number: 8179455Abstract: A Optical Black Pixel (OBP) cancellation circuit corrects offsets in sensors in a CCD/CMOS image sensor when reading dark pixels such at the periphery. A pixel voltage is switched to a sampling capacitor during two phases of the same pixel pulse. Sampling capacitors and feedback capacitors connect to differential inputs of an amplifier. An accumulating capacitor accumulates voltage differences and generates a common-mode voltage that is fed back to another sampling capacitor that stores an amplifier offset. The sampling capacitor and accumulating capacitor and their associated switches form a discrete-time first-order low-pass filter that filters the pixel voltage during the first phase. In the second phase the amplifier acts as a unity-gain amplifier to output an average of the pixel voltage differences generated during an OBP time when blackened or covered pixels are read from the image sensor.Type: GrantFiled: March 11, 2010Date of Patent: May 15, 2012Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.Inventors: Lap Chi (David) Leung, Yat Tung Lai, Chun Fai Wong, Kam Hung Chan, Kwok Kuen (David) Kwong
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Publication number: 20110221938Abstract: A Optical Black Pixel (OBP) cancellation circuit corrects offsets in sensors in a CCD/CMOS image sensor when reading dark pixels such at the periphery. A pixel voltage is switched to a sampling capacitor during two phases of the same pixel pulse. Sampling capacitors and feedback capacitors connect to differential inputs of an amplifier. An accumulating capacitor accumulates voltage differences and generates a common-mode voltage that is fed back to another sampling capacitor that stores an amplifier offset. The sampling capacitor and accumulating capacitor and their associated switches form a discrete-time first-order low-pass filter that filters the pixel voltage during the first phase. In the second phase the amplifier acts as a unity-gain amplifier to output an average of the pixel voltage differences generated during an OBP time when blackened or covered pixels are read from the image sensor.Type: ApplicationFiled: March 11, 2010Publication date: September 15, 2011Applicant: Hong Kong Applied Science & Technology Research Institute Company LimitedInventors: Lap Chi (David) LEUNG, Yat Tung LAI, Chun Fai WONG, Kam Hung CHAN, Kwok Kuen (David) KWONG
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Publication number: 20110056242Abstract: A visible setting comprises a setting base and one or more gemstones or diamonds. The setting base comprises one or more upper fixing portions and a lower connection portion, each fixing portion is fixed to a girdle of a gemstone or diamond at certain fixing points to enable to fix the gemstone or diamond in its setting position. Except for the fixing points, the rest of the girdle, a crown and a table of the gemstone or diamond are exposed, and a pavilion of the gemstone or diamond is suspended, and thereby a culet of the gemstone or diamond and part of the pavilion around the culet are displaced away from the setting base to enable to be exposed, which enables external light to enter into the gemstone or diamond from the crown, the table and the exposed part of the pavilion. The present visible setting could enhance the reflection of light within the gemstones or diamonds, and make the gemstones or diamonds as brilliant as possible.Type: ApplicationFiled: September 7, 2010Publication date: March 10, 2011Applicant: UNIVERSAL JEWELLERY DESIGN CENTER LIMITEDInventor: Kam Hung CHAN