Abstract: Charge transport compounds are described that have a multiple number of hydrazone-bridged heterocyclic groups (especially julolidine groups, carbazole groups, triarylamine groups and (N,N-disubstituted)arylamine groups such as dialkarylamine groups (e.g. dimethylphenylamine; methylethylphenylamine, dipropylphenylamine, ethylepropylphenylamine, ethylbutylnaphthylamine, etc.), alkyldiarylamine groups (e.g. methyldiphenylamino, ethyldiphenylamino, etc), and triarylamino groups (e.g., triphenyl amino, trinaphthylamino, etc)) connected by a central bridging group.

Abstract: A method of gate metal layer deposition using a cyclical deposition process for thin film transistor applications is described. The cyclical deposition process comprises alternately adsorbing a metal-containing precursor and a reducing gas on a substrate. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a gate layer, may be formed using such cyclical deposition techniques.

Abstract: A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.

Abstract: A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.

Abstract: Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.

Abstract: Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.

Abstract: An improved method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250° C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

Abstract: A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250.degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

Abstract: A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.

Abstract: A plasma-based generator for use with a power source including a plasma tube having a hollow tube body in which a plasma is generated by the power source; a first support structure supporting a downstream end of the plasma tube; and a second support structure holding an upstream end of the plasma tube, the second support structure connected to the first support structure, the second support structure including an expansion joint which changes its length to accommodate a lengthening and a shortening of the plasma tube due to its thermal expansion and contraction when plasma processing is performed within the plasma tube.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

Abstract: A method of depositing layers of intrinsic amorphous silicon and doped amorphous silicon sequentially on a substrate in the same CVD chamber without incurring a dopant contamination problem. The method can be carried out by first depositing an additional layer of a dielectric insulating material prior to the deposition process of the intrinsic amorphous silicon layer. The additional layer of insulating material deposited on the substrate should have a thickness such that residual insulating material coated on the chamber walls is sufficient to cover the residual dopants on the chamber walls left by the deposition process of the previous substrate. This provides a clean environment for the next deposition process of an intrinsic amorphous silicon layer on a substrate in the same CVD chamber.

Abstract: A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.