Abstract: Systems and methods for performing slide drilling and for determining operational parameters to be utilized during slide drilling. An example method includes commencing operation of a processing device, whereby the processing device determines a reference rotational distance of a top drive to be utilized during slide drilling. The processing device outputs a control command to the top drive to cause the top drive to rotate a drill string. The processing device also determines the reference rotational distance based on rotational distance measurements indicative of rotational distance achieved by the top drive and torque measurements indicative of torque applied to the drill string by the top drive.

Abstract: A method, computer system, and computer program product are provided for assessing a credit risk of a set of companies. A computer system creates a training data set from distance-to-default values for a first set of companies. The computer system builds a set of predictive models based on the training data set, linking the observed distance-to-default to market capitalization and total liabilities. The computer system forecasts estimated new distance-to-default values for a second set of companies, based on their current distance-to-default (obtained from the Merton approach), and a future change in market capitalization and/or change in total liabilities, according to the set of predictive models.

Abstract: A method, computer system, and computer program product are provided for assessing a credit risk of a set of companies. A computer system creates a training data set from distance-to-default values for a first set of companies. The computer system builds a set of predictive models based on the training data set, linking the observed distance-to-default to market capitalization and total liabilities. The computer system forecasts estimated new distance-to-default values for a second set of companies, based on their current distance-to-default (obtained from the Merton approach), and a future change in market capitalization and/or change in total liabilities, according to the set of predictive models.

Abstract: A method for drilling a subterranean wellbore includes deploying a drill string in the wellbore, the drill string including a drill bit and a steerable drilling motor. The drill string is automatically rotated at the surface back and forth between first and second opposing rotational directions, rotating in the first direction until a first torque limit is exceeded and rotating in the second direction until a second torque limit is exceeded. A toolface of the steerable drilling motor and a differential pressure across the steerable drilling motor are measured while automatically rotating the drill string. A surface processor processes the measured toolface and differential pressure in combination with a target toolface and a target differential pressure to compute new first and second torque limits. The automatic rotating is repeated using the new first and second torque limits.

Abstract: Systems and methods for performing slide drilling and for determining operational parameters to be utilized during slide drilling. An example method includes commencing operation of a processing device, whereby the processing device determines a reference rotational distance of a top drive to be utilized during slide drilling. The processing device outputs a control command to the top drive to cause the top drive to rotate a drill string. The processing device also determines the reference rotational distance based on rotational distance measurements indicative of rotational distance achieved by the top drive and torque measurements indicative of torque applied to the drill string by the top drive.

Abstract: A method for drilling a well includes orienting a steerable drilling motor at a selected toolface angle. The steerable drilling motor is connected by a drill string to a surface drilling location. The drill string is automatically rotated at the surface location in a first direction for a first predetermined time interval.

Abstract: Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

Abstract: Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

Abstract: Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

Abstract: Making foamed polyeolefin tapes include combining a polyolefin resin and a chemical blowing agent to form a mixture. This mixture can then be heated in an extruder to create a supersaturated solution of gas within the polyolefin resin. A cooling device can be positioned adjacent to a die at a set distance for receiving extruded resin and for allowing exposure of the extruded resin to ambient air. This space between the cooling device and die outlet allows bubbles to grow in the extruded resin and to be shaped such that voids or empty spaces can be generated within the extruded polyolefin resin. The voids allow the formation of tapes which use less material but have adequate strength for various applications, such as carpet backings, geotextiles, packaging, housewrap, bags, wire insulation, and reinforcement elements in concrete.

Abstract: Making foamed polyolefin tapes can include combining a polyolefin resin and a chemical blowing agent to form a mixture. This mixture can then be heated in an extruder to create a supersaturated solution of gas within the polyolefin resin. A cooling device can be positioned adjacent to a die at a set distance for receiving extruded resin and for allowing exposure of the extruded resin to ambient air between a die outlet and the cooling device. This predetermined distance or space between the cooling device and die outlet allows bubbles to grow in the extruded resin and to be shaped such that voids or empty spaces can be generated within the extruded polyolefin resin. The voids or empty spaces allow the formation of tapes which use less material but have adequate strength for various applications, such as for carpet backings, geotextiles, packaging, housewrap, bags, wire insulation, and reinforcement elements in concrete.

Abstract: Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

Abstract: In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

Abstract: In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.