Abstract: Disclosed is a method of manufacturing a partially freestanding two-dimensional crystal film (16, 16?), the method comprising providing a substrate (10) carrying a catalyst layer (14) for forming the two-dimensional crystal layer on a first surface; forming the two-dimensional crystal film on the catalyst layer; covering at least the two-dimensional crystal film with a protective layer (18); etching a cavity (24) in a second surface of the substrate, the second surface being opposite to the first surface, said cavity terminating on the catalyst layer; etching the exposed part of the catalyst layer from the cavity; and removing the protective layer, thereby obtaining a two-dimensional crystal film that is freestanding over said cavity. A device manufactured in this manner is also disclosed.

Abstract: The invention provides a color conversion arrangement, a lighting unit, a solid state light emitter package, a luminaire and a specific use of a graphene layer. A color conversion arrangement (140) with the first aspect comprises a first luminescent layer (110), a supporting layer (106) and a first graphene layer (108). The color conversion arrangement (140) is for converting light of a first color to light of another color. The first luminescent layer (110) comprises a first luminescent material which absorbs a portion of light of a first spectral distribution comprising the first color and converts at least a portion of the absorbed light towards light of a second spectral distribution. The supporting layer (106) supports the luminescent layer (110). The first graphene layer (108) thermally conducts heat in a lateral direction such that temperature differences in the color conversion arrangement (140) are reduced. Different arrangements of the layers of the color conversion arrangement (140) are provided.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The present invention relates to lighting module, wherein a light exit window (12) of the lighting module is engraved such that the output color temperature of said lighting module is tuned. The present invention also relates to a method for tuning an output color temperature of a lighting module, said method comprising providing said lighting module comprising a light exit window (12), and a light source arranged to provide light having an optical path through said light exit window (12), said lighting module having a first output color temperature; and engraving a surface of said light exit window (12) such that the output color temperature of said lighting module is tuned to a second output color temperature.

Abstract: Method for producing a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: Disclosed is a method of manufacturing a partially freestanding two-dimensional crystal film (16, 16?), the method comprising providing a substrate (10) carrying a catalyst layer (14) for forming the two-dimensional crystal layer on a first surface; forming the two-dimensional crystal film on the catalyst layer; covering at least the two-dimensional crystal film with a protective layer (18); etching a cavity (24) in a second surface of the substrate, the second surface being opposite to the first surface, said cavity terminating on the catalyst layer; etching the exposed part of the catalyst layer from the cavity; and removing the protective layer, thereby obtaining a two-dimensional crystal film that is freestanding over said cavity. A device manufactured in this manner is also disclosed.

Abstract: The present invention relates to lighting module, wherein a light exit window (12) of the lighting module is engraved such that the output color temperature of said lighting module is tuned. The present invention also relates to a method for tuning an output color temperature of a lighting module, said method comprising providing said lighting module comprising a light exit window (12), and a light source arranged to provide light having an optical path through said light exit window (12), said lighting module having a first output color temperature; and engraving a surface of said light exit window (12) such that the output color temperature of said lighting module is tuned to a second output color temperature.

Abstract: Described is an (organic) light-emitting diode ((O)LED) wherein the light-emitting layer comprises a blend of an electroluminescent semiconducting material with a ferro-electric material. Either of the electrodes forms a modulatable injection barrier with the ferro-electric material, the modulation requiring a voltage Vm serving to polarize or repolarize the ferro-electric material. With Vm being larger than the voltage Ve required for light emission, the (O)LED can be turned “on” or “off” by applying a pulse voltage to (re)polarize the ferro-electric material.

Abstract: The invention provides a color conversion arrangement, a lighting unit, a solid state light emitter package, a luminaire and a specific use of a graphene layer. A color conversion arrangement (140) with the first aspect comprises a first luminescent layer (110), a supporting layer (106) and a first graphene layer (108). The color conversion arrangement (140) is for converting light of a first color to light of another color. The first luminescent layer (110) comprises a first luminescent material which absorbs a portion of light of a first spectral distribution comprising the first color and converts at least a portion of the absorbed light towards light of a second spectral distribution. The supporting layer (106) supports the luminescent layer (110). The first graphene layer (108) thermally conducts heat in a lateral direction such that temperature differences in the color conversion arrangement (140) are reduced. Different arrangements of the layers of the color conversion arrangement (140) are provided.

Abstract: The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: Described is an (organic) light-emitting diode ((O)LED) wherein the light-emitting layer comprises a blend of an electroluminescent semiconducting material with a ferro-electric material. Either of the electrodes forms a modulatable injection barrier with the ferro-electric material, the modulation requiring a voltage Vm serving to polarize or repolarize the ferro-electric material. With Vm being larger than the voltage Ve required for light emission, the (O)LED can be turned “on” or “off” by applying a pulse voltage to (re)polarize the ferro-electric material.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.