Abstract: Disclosed herein are graphene coatings characterized by a porous, three-dimensional, spherical structure having a hollow core, along with methods for forming such graphene coatings on glasses, glass-ceramics, ceramics, and crystalline materials. Such coatings can be further coated with organic or inorganic layers and are useful in chemical and electronic applications.

Abstract: Disclosed herein are graphene coatings characterized by a porous, three-dimensional, spherical structure having a hollow core, along with methods for forming such graphene coatings on glasses, glass-ceramics, ceramics, and crystalline materials. Such coatings can be further coated with organic or inorganic layers and are useful in chemical and electronic applications.

Abstract: Disclosed herein are graphene coatings characterized by a porous, three-dimensional, spherical structure having a hollow core, along with methods for forming such graphene coatings on glasses, glass-ceramics, ceramics, and crystalline materials. Such coatings can be further coated with organic or inorganic layers and are useful in chemical and electronic applications.

Abstract: Disclosed herein are graphene coatings characterized by a porous, three-dimensional, spherical structure having a hollow core, along with methods for forming such graphene coatings on glasses, glass-ceramics, ceramics, and crystalline materials. Such coatings can be further coated with organic or inorganic layers and are useful in chemical and electronic applications.

Abstract: Disclosed herein are graphene coatings characterized by a porous, three-dimensional, spherical structure having a hollow core, along with methods for forming such graphene coatings on glasses, glass-ceramics, ceramics, and crystalline materials. Such coatings can be further coated with organic or inorganic layers and are useful in chemical and electronic applications.

Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates via non-polymeric methods. The improved processes provide graphene materials with less defects in the structure.

Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates to ultrathin, flexible glass targets. The improved processes provide graphene materials with less defects in the structure.

Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates to ultrathin, flexible glass targets. The improved processes provide graphene materials with less defects in the structure.

Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates via non-polymeric methods. The improved processes provide graphene materials with less defects in the structure.

Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.

Abstract: Methods of forming a laminate comprising a sheet of semiconductor material utilize a system. The system comprises a fibrous sheet, a guide member for guiding the fibrous sheet, and a melt of a semiconductor material. The sheet of semiconductor material and a laminate comprising the fibrous sheet and the sheet of semiconductor material are also included.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: A process for modifying a surface of a cast polycrystalline silicon sheet to decrease the light reflectance of the cast polycrystalline sheet is disclosed. The cast polycrystalline silicon sheet has at least one structural feature resulting from the cast polycrystalline silicon sheet being directly cast to a thickness less than 1000 micrometers. The process comprises grit blasting the surface of the cast polycrystalline silicon sheet to give an abraded surface on the cast polycrystalline silicon sheet. The process further comprises chemically etching the abraded surface of the cast polycrystalline silicon sheet to give a chemically-etched, abraded surface. The light reflectance of the chemically-etched, abraded surface is decreased in comparison to the light reflectance of the surface of the cast polycrystalline silicon sheet before the step of grit blasting.

Abstract: A method for treating semiconducting materials includes providing a semiconducting material having a crystalline structure, pre-heating a portion of the semiconducting material to a temperature less than the melting temperature of the semiconducting material, and then cooling the semiconducting material prior to exposing at least the portion of the semiconducting material to a heat source to create a melt pool, and cooling the semiconducting material.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: Nanomaterial and methods for generating nanomaterial are described wherein a reaction, for example, decomposition, for generating nanomaterial occurs utilizing a hot wall reactor.

Abstract: A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed.