Patents by Inventor Kamaram Munira

Kamaram Munira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Layered Heusler alloys and methods for the fabrication and use thereof
    Patent number: 10403425
    Abstract: Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: September 3, 2019
    Assignee: The Board of Trustees of the University of Alabama
    Inventors: William H. Butler, Kamaram Munira, Javad Ghasemi Azadani
  • LAYERED HEUSLER ALLOYS AND METHODS FOR THE FABRICATION AND USE THEREOF
    Publication number: 20170207016
    Abstract: Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.
    Type: Application
    Filed: April 3, 2017
    Publication date: July 20, 2017
    Inventors: William H. Butler, Kamaram Munira, Javad Ghasemi Azadani
  • Layered heusler alloys and methods for the fabrication and use thereof
    Patent number: 9643385
    Abstract: Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: May 9, 2017
    Assignee: The Board of Trustees of The University of Alabama
    Inventors: William H. Butler, Kamaram Munira, Javad G. Azadani
  • Method and system for providing magnetic junctions including Heusler multilayers
    Patent number: 9634241
    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: April 25, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: William H. Butler, Kamaram Munira, Roman Chepulskyy, Dmytro Apalkov
  • METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLER MULTILAYERS
    Publication number: 20160043301
    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
    Type: Application
    Filed: July 24, 2015
    Publication date: February 11, 2016
    Inventors: William H. Butler, Kamaram Munira, Roman Chepulskyy, Dmytro Apalkov