Abstract: Provided are a complex of an anti-IL-4R antibody or an antigen-binding fragment thereof, and a medical use thereof. Specifically, provided are a complex of an antibody that specifically binds to IL-4R or an antigen-binding fragment thereof covalently linked to a toxin, a pharmaceutical composition comprising the complex, and a use thereof in the preparation of a drug for treating IL-4R-mediated diseases or disorders, especially a use in the preparation of an anti-cancer drug.

Abstract: An interactive application processing method is described. A selection of an online interactive activity by a user is received in an interactive application. The online interactive activity is associated with an offline interactive activity. According to a past performance result, a determination is made, by circuitry of an interactive application apparatus, as to whether the user qualifies to participate in the offline interactive activity. When the user is determined to qualify to participate in the offline interactive activity, identity information of the user is acquired. A certificate is generated based on the identity information for allowing the user to participate in the offline interactive activity.

Abstract: An interactive application processing method is described. A selection of an online interactive activity by a user is received in an interactive application. The online interactive activity is associated with an offline interactive activity. According to a past performance result, a determination is made, by circuitry of an interactive application apparatus, as to whether the user qualifies to participate in the offline interactive activity. When the user is determined to qualify to participate in the offline interactive activity, identity information of the user is acquired. A certificate is generated based on the identity information for allowing the user to participate in the offline interactive activity.

Abstract: A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

Abstract: An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

Abstract: A method of forming the structure of the semiconductor device having a waveguide. Firstly, a SOI substrate including a bulk silicon, an insulating layer, and a silicon layer is provided and a device region and a waveguide region are defined on the SOI substrate. Afterwards, a protection layer and a patterned shielding layer are formed to cover the waveguide region and expose the device region. Subsequently, a recess is formed by etching the protection layer, the silicon layer and the insulating layer and thereby the bulk silicon is exposed. After that, an epitaxial silicon layer is formed in the recess and a semiconductor device is subsequently formed on the epitaxial silicon layer. Also, the present invention conquers the poor electrical performance of the semiconductor device integrated into the SOI substrate.

Abstract: An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

Abstract: A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.