Abstract: Methods for forming a gate structure of a multi-gate device are provided. An example method includes depositing a gate dielectric layer over first nanostructures over a first region of a substrate and second nanostructures over a second region of the substrate, depositing a first work function metal (WFM) layer over the first nanostructures and the second nanostructures, depositing a first hard mask (HM) layer over the first WFM layer, selectively removing the first HM layer and the first WFM layer over the first region, selectively removing the first HM layer over the second region, depositing a second WFM layer over the substrate, depositing a second HM layer over the second WFM layer, selectively removing the second HM layer and the second WFM layer over the first region, selectively removing the second HM layer over the second region, and depositing a third WFM layer over the substrate.

Abstract: Scalable computer systems with redundant power supplies for improved fault tolerance and reliability are provided. The system includes a plurality of compute nodes, and includes a plurality of DC power supplies arranged in a ring configuration with the compute nodes. The first compute node is electrically connected to the last DC power supply. Each compute node is coupled to receive regulated DC voltages from two of the plurality of DC power supplies. The compute nodes may include processors, storage devices and/or memory devices.

Abstract: A laser projection module is provided. The laser projection module includes a substrate assembly, a lens barrel assembly, a light source, a diffractive optical element and a collimation element. The lens barrel assembly includes a lens barrel and a stop member connected to the lens barrel. The lens barrel is disposed on the substrate assembly and configured to define a receiving cavity together with the substrate assembly. The light source is disposed on the substrate assembly, accommodated in the receiving cavity, and configured to emit laser to the receiving cavity. The diffractive optical element and the collimation element are accommodated in the receiving cavity. The light source, the collimation element and the diffractive optical element are sequentially disposed in an optical path of the light source. The stop member is configured to prevent the diffractive optical element from moving in a light-emitting direction of the laser projection module.

Abstract: A laser projection module is provided. The laser projection module includes a substrate assembly, a lens barrel assembly, a light source, a diffractive optical element and a collimation element. The lens barrel assembly includes a lens barrel and a stop member connected to the lens barrel. The lens barrel is disposed on the substrate assembly and configured to define a receiving cavity together with the substrate assembly. The light source is disposed on the substrate assembly, accommodated in the receiving cavity, and configured to emit laser to the receiving cavity. The diffractive optical element and the collimation element are accommodated in the receiving cavity. The light source, the collimation element and the diffractive optical element are sequentially disposed in an optical path of the light source. The stop member is configured to prevent the diffractive optical element from moving in a light-emitting direction of the laser projection module.

Abstract: Provided is a recovery method for a copper-indium-gallium-selenium material, mainly comprising the steps of sulfuric acid aeration leaching at a high temperature, reducing selenium with sodium sulfite, separating copper by extracting, separating indium and gallium with an alkali, replacing indium, electrolyzing gallium, etc. In the recovery method for a copper-indium-gallium-selenium material, a sulfuric acid aeration leaching means is used, thus reducing acid gas pollution; at the same time, an extraction agent for copper is used to extract copper, wherein the separating effect is good and the cost is low, and the extracted copper is directly electrolyzed so as to obtain a high-purity metal copper; moreover, an alkali is used to separate gallium, wherein realizing the separation of indium and gallium only requires the adjustment of the pH value of a solution, the separating effect is good and the obtained indium and gallium products have a relatively high purity.

Abstract: A method for recycling copper indium gallium selenium materials comprises the steps of sulphating roasting, acid dissolution, extraction and electrolysis of metal copper, production of a gallium hydroxide deposition, replacement of indium, and the like.

Abstract: A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.

Abstract: A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.

Abstract: A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

Abstract: A transistor includes a gate structure of HfMoN. The work function of the gate structure can be modulated by doping the HfMoN with dopants including nitride, silicon or germanium. The gate structure of HfMoN of the present invention is applicable to PMOS, NMOS or CMOS transistors.

Abstract: A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

Abstract: An etchant for etching a metal alloy having hafnium and molybdenum includes 20 to 80 percent by weight of nitric acid, 1 to 49 percent by weight of hydrofluoric acid, 1 to 96 percent by weight of sulfuric acid, and 1 to 30 percent by weight of water, based on the total weight of the etchant.

Abstract: A flat bed scanner having a transparent platform and a scanning mechanism is provided in the present invention. The transparent platform is used to support the objects that wait for scanning. The scanning mechanism is movably placed under the transparent platform along the length direction of the transparent platform. The scanning mechanism includes a plurality of LEDs, a camera lens and a CCD. The LEDs are arranged in a line along the width direction of the transparent platform. The scanning mechanism further includes a diffuser that is placed over the LEDs and has the same width with the transparent platform, and the diffuser diffuses the light beams radiated from the LEDs and then projects the light beams being diffused over the objects that wait for scanning.

Abstract: A wafer container for conveying silicon wafers, which can be readily re-used after transportation. The cover of the container has recesses to stress the wafers to prevent shaking. The container can be piled up and are easy to open.