Abstract: The present disclosure relates to a method of singulation of dies from a wafer, the wafer includes a semiconductor layer and a coating applied to the backside of the wafer after backgrinding, and the coating includes at least one metallization layer, the dies being separated along saw streets running in multiple directions. The method includes the steps of: dicing the wafer along the saw streets from a topside of the wafer; and the dicing is performed through plasma dicing for a dicing depth corresponding to the interface between the semiconductor layer and the coating. The method further includes the step of: etching the wafer in accordance with an etch mask corresponding to the saw streets, for each of the remaining metallization layers in the coating, and for singulating the dies from the wafer.

Abstract: This disclosure relates to a new package concept that eliminates the need for epoxy or epoxy solder used in traditional clip/lead frame-based power packages. The disclosure overcomes this disadvantage in clip-based packages by depositing the interconnect structure directly to the bod pads. The formation of the interconnect done at lower temperature leads to lower stress induced onto the die. Another advantage of the present disclosure is that semiconductor dies packaged using a method according to the present disclosure will have smaller footprint as the pads are directly built up/deposited. Another advantage of the method according to the present disclosure is that it allows large scale, i.e., panel level processing. Such a panel may include multiple ICs, or transistor or any other semiconductor devices.

Abstract: This disclosure relates to a flank wettable semiconductor device, having: a lead frame including a plurality of leads with a lead end portion and a semiconductor die mounted on the lead frame. The lead end portion comprises a recess portion having a height that corresponds to a thickness of the lead end portion, and a plate member mounted on the leadframe at the lead end portion.

Abstract: This disclosure relates to a flank wettable semiconductor device, having: a lead frame including a plurality of leads with a lead end portion and a semiconductor die mounted on the lead frame. The lead end portion comprises a recess portion having a height that corresponds to a thickness of the lead end portion, and a plate member mounted on the leadframe at the lead end portion.

Abstract: A semiconductor device includes a semiconductor die having a top surface that has one or more electrical contacts formed thereon, and an opposite bottom surface. A molding material encapsulates the top surface and at least a part of a side surface of the semiconductor die. The molding material defines a package body that has a top surface and a side surface. Openings are formed on the top surface of the package body, and the electrical contacts are partially exposed from the molding material through the openings. A metal layer is formed over and electrically connected to the electrical contacts through the openings. The metal layer extends to and at least partially covers the side surface of the package body.

Abstract: An electronic device has a first surface, a second surface opposite to the first surface, and sidewalls located between and adjoining the first and second surfaces. The electronic device includes contact pads on the first surface. The contact pads extend from the first surface to adjoining sidewalls, and abut the sidewalls.

Abstract: A semiconductor die has internal circuitry formed on two more internal layers, and die bonding pads arranged on a top surface of the die. The bonding pads are connected to the internal circuitry for providing input and output signals to the internal circuitry. One or more connecting lines electrically connect one or more pairs of the die bonding pads, thereby defining a bonding pad layout. The die bonding pads are arranged and connected with the connecting lines such that the bonding pad layout is reversible, which allows the die to be used in different package types (e.g., TSSOP or DFN) yet maintain a standardized pin arrangement without the necessity for long or crossed bond wires.

Abstract: A semiconductor device includes a semiconductor die having a first side having a first terminal and an opposite second side having at least two second terminals. A lead frame has a first part and a second part. The second part of the lead frame is both electrically and mechanically spaced from the first part. The second side of the die is attached to the lead frame such that the first and second lead frame parts are respectively connected to the at least two second terminals. The first and second lead frame parts include respective first and second extensions that project past a side of the die and provide first and second terminal surfaces that are co-planar with the first terminal on the first side of the die. The device makes use of the terminals on the both sides of the die. The device second side is exposed for thermal performance.

Abstract: Embodiments of a packaged semiconductor device with interior polygon pads are disclosed. One embodiment includes a semiconductor chip and a package structure defining a rectangular boundary and having a bottom surface that includes interior polygonal pads exposed at the bottom surface of the package structure and located on a centerline of the bottom surface of the package structure and edge polygonal pads exposed at the bottom surface of the package structure, located at an edge of the rectangular boundary, and including one edge polygonal pad in the vicinity of each corner of the rectangular boundary. The interior polygonal pads are configured such that a line running between at least one vertex of each of the interior polygonal pads is parallel to an edge of the rectangular boundary of the package structure.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.

Abstract: A semiconductor die has internal circuitry formed on two more internal layers, and die bonding pads arranged on a top surface of the die. The bonding pads are connected to the internal circuitry for providing input and output signals to the internal circuitry. One or more connecting lines electrically connect one or more pairs of the die bonding pads, thereby defining a bonding pad layout. The die bonding pads are arranged and connected with the connecting lines such that the bonding pad layout is reversible, which allows the die to be used in different package types (e.g., TSSOP or DFN) yet maintain a standardized pin arrangement without the necessity for long or crossed bond wires.

Abstract: A semiconductor device includes a semiconductor die having a top surface that has one or more electrical contacts formed thereon, and an opposite bottom surface. A molding material encapsulates the top surface and at least a part of a side surface of the semiconductor die. The molding material defines a package body that has a top surface and a side surface. Openings are formed on the top surface of the package body, and the electrical contacts are partially exposed from the molding material through the openings. A metal layer is formed over and electrically connected to the electrical contacts through the openings. The metal layer extends to and at least partially covers the side surface of the package body.

Abstract: A semiconductor device has wettable corner leads. A semiconductor die is mounted on a lead frame. Die bonding pads are electrically connected to leads of the lead frame. The die and electrical connections are encapsulated with a mold compound. The leads are exposed and flush with the corners of the device. The leads include dimples so that they are wettable, which facilitates inspection when the device is mounted on a circuit board or substrate.

Abstract: A semiconductor device includes a semiconductor die having a first side having a first terminal and an opposite second side having at least two second terminals. A lead frame has a first part and a second part. The second part of the lead frame is both electrically and mechanically spaced from the first part. The second side of the die is attached to the lead frame such that the first and second lead frame parts are respectively connected to the at least two second terminals. The first and second lead frame parts include respective first and second extensions that project past a side of the die and provide first and second terminal surfaces that are co-planar with the first terminal on the first side of the die. The device makes use of the terminals on the both sides of the die. The device second side is exposed for thermal performance.

Abstract: An electronic device includes a conductive layer, a device die, and a connecting member. The conductive layer is formed by coating a conductive material on a substrate. The device die and the connecting member are disposed on the conductive layer and spaced from each other. The device die includes a first connection point on one side that is in contact with and electrically connected to the conductive layer, and a second connection point on another side thereof. The connecting member includes a third connection point on a side thereof electrically connected to and in contact with the conductive layer, and a fourth connection point on another side thereof. The second and fourth connection points are configured to provide external connections of the electronic device.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.

Abstract: Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound, the die attach area having exposed areas to facilitate device die attachment thereon and the terminal I/O terminals providing connection to the device die bond pads; connection traces electrically couple the I/O terminals with one another, said connection traces having facilitated electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. An envelope of molding compound encapsulates the device die onto the built-up substrate lead frame.

Abstract: An electronic device has a first surface, a second surface opposite to the first surface, and sidewalls located between and adjoining the first and second surfaces. The electronic device includes contact pads on the first surface. The contact pads extend from the first surface to adjoining sidewalls, and abut the sidewalls.

Abstract: Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound, the die attach area having exposed areas to facilitate device die attachment thereon and the terminal I/O terminals providing connection to the device die bond pads; connection traces electrically couple the I/O terminals with one another, said connection traces having facilitated electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. An envelope of molding compound encapsulates the device die onto the built-up substrate lead frame.

Abstract: Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a QFN package (quad-flat-pack no-leads) built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound; the die attach area has exposed areas to facilitate device die attachment thereon and the terminal I/O terminals provide connection to the device die bond pads. I/O terminals are electrically coupled with one another and to the die attach area with connection traces. The coupled I/O terminals and connection traces facilitate electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. Molding compound encapsulates the device die on the built-up substrate lead frame.