Abstract: Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member.

Abstract: A method for producing an epitaxial silicon wafer by applying a vapor deposition on a silicon wafer is disclosed. A vapor deposition apparatus in which the vapor deposition is conducted at least includes a chamber and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve including a diaphragm that allows or blocks a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-free anticorrosion alloy material is used for the diaphragm. When a maintenance work is to be done inside the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.

Abstract: An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×106 atoms/cm2 or less. Further, the W concentration obtained by the metal analysis of the surface of the silicon epitaxial layer using the inductively coupled plasma mass spectrometry is preferably 1×107 atoms/cm2 or less.

Abstract: A method for producing an epitaxial silicon wafer by applying a vapor deposition on a silicon wafer is disclosed. A vapor deposition apparatus in which the vapor deposition is conducted at least includes a chamber and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve including a diaphragm that allows or blocks a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-free anticorrosion alloy material is used for the diaphragm. When a maintenance work is to be done inside the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.

Abstract: Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member.