Abstract: A memory device includes a first conductive layer, a second conductive layer, and a variable resistance layer disposed between the first and second conductive layers. The variable resistance layer includes a first layer containing a semiconductor or a first metal oxide, a second layer disposed between the first layer and the first conductive layer, and containing a second metal oxide, and a first amorphous layer disposed between the second layer and the first conductive layer.

Abstract: To provide a method for producing an organic compound having a sulfo group by efficiently hydrolyzing an organic compound having a fluorosulfonyl group with a small number of steps with a small quantity of waste liquid. A method for producing an organic compound having a sulfo group, which comprises bringing an organic compound having a fluorosulfonyl group into contact with subcritical water at from 200 to 320° C. to convert the fluorosulfonyl group into a sulfo group.

Abstract: To provide a method for producing an organic compound having a sulfo group by efficiently hydrolyzing an organic compound having a fluorosulfonyl group with a small number of steps with a small quantity of waste liquid. A method for producing an organic compound having a sulfo group, which comprises bringing an organic compound having a fluorosulfonyl group into contact with subcritical water at from 200 to 320° C. to convert the fluorosulfonyl group into a sulfo group.

Abstract: An ether composition and a lubricant which bond to substrates with a high bonding ratio and form a coating having a low friction coefficient surface are provided. An ether composition comprising at least two compounds selected from (X—)3Y3, (X—)2Y3—Z and X—Y3(—Z)2 wherein the total number of moles of CF3 groups in Z in relation to the sum of the total number of moles of CF3 groups in Z and the total number of moles of OH groups in X is at least 0.001 and at most 0.30. X is HO—(CH2CH2O)a.(CH2CH(OH)CH2O)b-Q-, Y3 is a perfluoroalkane-triyl group, and Z is CF3(CF2)sO(CF2CF2O)g—, wherein a is an integer of from 0 to 100, b is 0 or 1, s is an integer of from 0 to 19, g is an integer of from 3 to 200, and Q is a polyfluorinated polymethylene group or a polyfluorinated polymethylene group having an etheric oxygen atom bonded between carbon-carbon atoms and/or an etheric oxygen atom bonded to the terminal carbon atom bonded to Y3.