Patents by Inventor Kana Shimizu

Kana Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing semiconductor device
    Patent number: 8368176
    Abstract: A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.
    Type: Grant
    Filed: June 9, 2011
    Date of Patent: February 5, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Takayuki Iwaki, Takamasa Itou, Kana Shimizu
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20110304017
    Abstract: A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.
    Type: Application
    Filed: June 9, 2011
    Publication date: December 15, 2011
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Takayuki IWAKI, Takamasa ITOU, Kana SHIMIZU