Patents by Inventor Kanae ENDO

Kanae ENDO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240006510
    Abstract: There is provided a thyristor with desensitized gate sensitivity. In accordance with this, the third P-type semiconductor layer, which is connected to a gate electrode, has an impurity concentration higher than that of a second P-type semiconductor layer. A fourth P-type semiconductor layer, which is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer, is disposed below the cathode electrode, and has an impurity concentration higher than that of the second P-type semiconductor layer.
    Type: Application
    Filed: September 28, 2022
    Publication date: January 4, 2024
    Inventors: Kanae ENDO, Tadashi INOUE, Yukihiro SHIBATA