Patents by Inventor Kanako Komatsu
Kanako Komatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11908897Abstract: Among multiple drain regions, a contact surface area between second contacts and a drain region most proximal to a central portion of an element region in a second direction is less than a contact surface area between second contacts and a drain region disposed on an outermost side of the element region in the second direction. The multiple drain regions are arranged in the second direction.Type: GrantFiled: October 8, 2021Date of Patent: February 20, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventor: Kanako Komatsu
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Publication number: 20230299129Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type; a semiconductor layer located on the semiconductor substrate, the semiconductor layer being of the first conductivity type and including a first device part; a buried layer located between the semiconductor substrate and the first device part, the buried layer being of a second conductivity type; a guard region located at a first-direction side of the first device part, the guard region being of the second conductivity type, a lower end of the guard region contacting the buried layer, an upper end of the guard region reaching an upper surface of the semiconductor layer, the guard region not being located at a second-direction side of the first device part, the second direction being opposite to the first direction; and a first semiconductor region located inside the first device part and being of the second conductivity type.Type: ApplicationFiled: September 8, 2022Publication date: September 21, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Kanako KOMATSU, Yoshiaki ISHII, Daisuke SHINOHARA
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Publication number: 20230087733Abstract: According to one embodiment, a semiconductor device includes: a semiconductor substrate; a first well of a first conductivity type in a surface region that comprises a surface of the semiconductor substrate; a first impurity region of a second conductivity type in a region of a surface of the first well; a second impurity region of the second conductivity type, a portion of the first well being located between the second impurity region and the first impurity region in the surface region of the semiconductor substrate; a first insulating body on the surface of the semiconductor substrate; a gate electrode extending over part of the first well and part of the second impurity region on the first insulating body; a second insulating body extending on an upper surface of the gate electrode and over a region above the second impurity region; and a first conductive body on the second insulating body.Type: ApplicationFiled: March 3, 2022Publication date: March 23, 2023Inventors: Kanako KOMATSU, Daisuke SHINOHARA
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Publication number: 20230091860Abstract: According to one embodiment, a semiconductor device includes a substrate having a first surface and an insulator that surrounds a first region of the first surface. A gate electrode is on the first region and has a first resistivity. A first conductor is also on the first region. The first conductor comprises a same material as the gate electrode, but has a second resistivity that is different from the first resistivity. The resistivity may be different, for example, by either use of different dopants/impurities or different concentrations of dopants/impurities. Resistivity may also be different due to inclusion of a metal silicide on the conductors or not.Type: ApplicationFiled: March 2, 2022Publication date: March 23, 2023Inventor: Kanako KOMATSU
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Publication number: 20220181486Abstract: A semiconductor device includes a semiconductor substrate, an insulating member provided on the semiconductor substrate and an electrode disposed on the semiconductor substrate and on the insulating member. The insulating member includes a plurality of first portions and a plurality of second portions thinner than the first portions. The first portions and the second portions are arranged alternately along a first direction, the first direction being parallel to a region of an upper surface of the semiconductor substrate not contacting the insulating member.Type: ApplicationFiled: February 22, 2022Publication date: June 9, 2022Inventor: Kanako Komatsu
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Publication number: 20220045171Abstract: Among multiple drain regions, a contact surface area between second contacts and a drain region most proximal to a central portion of an element region in a second direction is less than a contact surface area between second contacts and a drain region disposed on an outermost side of the element region in the second direction. The multiple drain regions are arranged in the second direction.Type: ApplicationFiled: October 8, 2021Publication date: February 10, 2022Inventor: Kanako Komatsu
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Patent number: 11121247Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.Type: GrantFiled: September 16, 2019Date of Patent: September 14, 2021Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Tomoko Kinoshita, Daisuke Shinohara, Kanako Komatsu, Yoshiaki Ishii, Sudharsan Sundaram Prabhakaran
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Publication number: 20210143253Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the semiconductor substrate, a first deep semiconductor region of a second conductivity type provided between the semiconductor substrate and the semiconductor layer, a first guard ring region of the second conductivity type, a first separation region of the second conductivity type contacting the first guard ring region and the first deep semiconductor region, a first semiconductor region of the first conductivity type, and a second semiconductor region of the first conductivity type; the first guard ring region and the first deep semiconductor region surround a first device part of the semiconductor layer; the first separation region partitions the first device part into a first region and a second region; and the first and second semiconductor regions are provided in the first and second regions.Type: ApplicationFiled: July 13, 2020Publication date: May 13, 2021Inventors: Mariko Yamashita, Kanako Komatsu, Yoshiaki Ishii, Daisuke Shinohara
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Publication number: 20210083089Abstract: A semiconductor device includes a semiconductor substrate, an insulating member provided on the semiconductor substrate and an electrode disposed on the semiconductor substrate and on the insulating member. The insulating member includes a plurality of first portions and a plurality of second portions thinner than the first portions. The first portions and the second portions are arranged alternately along a first direction, the first direction being parallel to a region of an upper surface of the semiconductor substrate not contacting the insulating member.Type: ApplicationFiled: December 4, 2019Publication date: March 18, 2021Inventor: Kanako Komatsu
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Publication number: 20200303537Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.Type: ApplicationFiled: September 16, 2019Publication date: September 24, 2020Inventors: Tomoko Kinoshita, Daisuke Shinohara, Kanako Komatsu, Yoshiaki Ishii, Sudharsan Sundaram Prabhakaran
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Publication number: 20200091304Abstract: A semiconductor device includes a semiconductor portion of a first conductivity type, an insulating portion provided in an upper layer portion of the semiconductor portion, a source region, a drain region and a gate electrode. The insulating portion surrounds an active area. The source region and the drain region are provided inside the active area and separated from each other along a first direction parallel to an upper surface of the semiconductor portion. The source region and the drain region are of a second conductivity type. The gate electrode is provided above the semiconductor portion. The gate electrode is disposed in a region directly above a region between the source region and the drain region, and disposed in a region directly above an end portion in a second direction of the active area. The second direction is orthogonal to the first direction.Type: ApplicationFiled: February 26, 2019Publication date: March 19, 2020Inventors: Mariko Yamashita, Tomoko Kinoshita, Keita Takahashi, Kanako Komatsu
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Publication number: 20200091293Abstract: Among multiple drain regions, a contact surface area between second contacts and a drain region most proximal to a central portion of an element region in a second direction is less than a contact surface area between second contacts and a drain region disposed on an outermost side of the element region in the second direction. The multiple drain regions are arranged in the second direction.Type: ApplicationFiled: February 27, 2019Publication date: March 19, 2020Inventor: Kanako Komatsu
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Publication number: 20190288063Abstract: A semiconductor device includes a semiconductor substrate, a plurality of first insulators provided on in an upper portion of the semiconductor substrate, and a plurality of second insulators provided in the upper portion of on the semiconductor substrate. The second insulators are thicker than the first insulators. The first insulators and the second insulators are arranged alternately.Type: ApplicationFiled: September 10, 2018Publication date: September 19, 2019Inventors: Kanako Komatsu, Yoshiaki Ishii
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Publication number: 20170243971Abstract: According to one embodiment, the gate insulating film is provided on a semiconductor region including the body region and the drift region between the source region and the drain region. The gate insulating film includes a first part and a second part. The first part is provided on the source region side. The second part is provided on the drain region side and thicker than the first part. The insulating portion is provided in the semiconductor region under a boundary between the first part and the second part of the gate insulating film.Type: ApplicationFiled: September 2, 2016Publication date: August 24, 2017Inventors: Kanako KOMATSU, Takehito IKIMURA
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Patent number: 9576948Abstract: A semiconductor device includes a first and second transistor. Each of the first and the second transistors includes a well of a first conductivity type, a band-shaped region provided on the well, a drain region of a second conductivity type provided on the well, and a gate electrode. The band-shaped region, the drain region and the gate electrode extend in a first direction. The band-shaped region includes a back gate region of the first conductivity type and a source region of the second conductivity type. The back gate region and the source region are arranged alternately along the first direction in the band-shaped region. A ratio of a length of the source region to a length of the back gate region along the first direction of the first transistor is greater than the ratio of the second transistor.Type: GrantFiled: June 23, 2015Date of Patent: February 21, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Kanako Komatsu, Keita Takahashi, Masahiro Inohara
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Patent number: 9337331Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.Type: GrantFiled: August 14, 2015Date of Patent: May 10, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Kanako Komatsu, Mariko Shimizu, Jun Morioka, Keita Takahashi, Masahito Nishigoori
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Publication number: 20150380546Abstract: A semiconductor device includes a first and second transistor. Each of the first and the second transistors includes a well of a first conductivity type, a band-shaped region provided on the well, a drain region of a second conductivity type provided on the well, and a gate electrode. The band-shaped region, the drain region and the gate electrode extend in a first direction. The band-shaped region includes a back gate region of the first conductivity type and a source region of the second conductivity type. The back gate region and the source region are arranged alternately along the first direction in the band-shaped region. A ratio of a length of the source region to a length of the back gate region along the first direction of the first transistor is greater than the ratio of the second transistor.Type: ApplicationFiled: June 23, 2015Publication date: December 31, 2015Inventors: Kanako Komatsu, Keita Takahashi, Masahiro Inohara
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Publication number: 20150357464Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.Type: ApplicationFiled: August 14, 2015Publication date: December 10, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kanako KOMATSU, Mariko SHIMIZU, Jun MORIOKA, Keita TAKAHASHI, Masahito NISHIGOORI
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Patent number: 9142613Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.Type: GrantFiled: August 7, 2014Date of Patent: September 22, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Kanako Komatsu, Mariko Shimizu, Jun Morioka, Keita Takahashi, Masahito Nishigoori
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Publication number: 20140339635Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.Type: ApplicationFiled: August 7, 2014Publication date: November 20, 2014Inventors: Kanako KOMATSU, Mariko SHIMIZU, Jun MORIOKA, Keita TAKAHASHI, Masahito NISHIGOORI