Abstract: According to one embodiment, a semiconductor memory device incudes: a stacked body in which a plurality of first conductive layers and a plurality of first insulating layers are alternately stacked one by one; and a contact that extends in the stacked body in the stacking direction, and is connected to a structure arranged on in the stacked body or below the stacked body. The contact includes: a second conductive layer that extends in the stacked body LM in the stacking direction, and serves as a core of the contact; and a second insulating layer that covers a sidewall of the second conductive layer, and serves as a liner of the contact.

Abstract: Semiconductor memory device includes: a first and second member each extending in a first direction in a boundary part between a first and second block region and arranged in the first direction; a support pillar arranged between the first and second member at the boundary part; conductive layers separated from one another and arranged in a third direction and split by the first and second member, and the support pillar into a first and second portion; and a memory pillar penetrating through the conductive layers. The support pillar includes a lower and upper pillar. A side face of the lower pillar and an extension of a side face of the upper pillar are displaced from each other in a plane based on a second and the third direction.