Abstract: A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also grown in a known spatial relationship to the superlattice. The doped layer is patterned as by etching and then the device is annealed to diffuse selenium impurities from the doped layer. The time and temperature of annealing are controlled such that the impurities diffuse into and thereby disorder regions of the superlattice layer, leaving a nondisordered region which can serve as a resonator in a laser.

Abstract: A surface-emitting injection type laser device has a semiconductor wafer including a first and a second main face opposite to each other and an active layer located on the side of the first main face. A single mode optical fiber chip has a first and second end surface perpendicular to its optical axis and is disposed on the semiconductor wafer with the first end surface contacting the second main face through a reflection preventing film. A dielectric film is disposed on the second end surface of the optical fiber chip to increase the reflection power at the second end surface and forming a resonator with the first main face of the semiconductor wafer.