Patents by Inventor Kanesige Takayanagi

Kanesige Takayanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5270573
    Abstract: A semiconductor element includes a vertical power MOSFET whose base material is silicon crystal having (100) plane as a major face. The semiconductor element is brazed to the surface of a metal plate with a brazing filler metal. By means of a transfer molding technology, the semiconductor element, the metal plate, inner lead wires and parts of external terminals are sealed in a resin having a linear expansion coefficient 1.2 times larger than that of the metal plate.The ON resistance of the field effect transistor can be decreased by 10% or more, and the exothermic reaction of a semiconductor device itself is restrained.
    Type: Grant
    Filed: December 30, 1991
    Date of Patent: December 14, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kanesige Takayanagi, Takashi Ono