Abstract: An "active matrix" type of liquid crystal matrix display panel, in which diodes are employed as switching elements coupled to each liquid crystal display element, photo-sensing elements such as photo-diodes are formed upon the display panel to enable data input to the panel by variation of the electrical characteristics of the photo-sensing elements by selectively varying the level of light incident thereon. The photo-sensing elements, when composed of photo-diodes, can be formed during the same manufacturing process and in the same manufacturing steps as those in which the diode switching elements are formed, so that no appreciable increase in manufacturing cost is entailed by adding such a data input function.

Abstract: In a matrix display device, non-linear resistance elements are coupled to each display element for controlling selective activation of display elements in response to drive signals, with each non-linear resistance element comprising sets of rectifying elements formed by thin film deposition which are connected in parallel with one another with opposing polarities. Each set comprise one or more rectifying elements formed of for example PN junctions, PIN junctions, Schottky junctions, etc., using material such as amorphous silicon as a semiconductor material, and the rectifying elements can be disposed in a multilayer configuration in order to reduce the display area occupied, or can be provided with transparent electrodes to positively utilized incident light to enhance current flow.

Abstract: In a liquid crystal color display panel comprising a color filter layer superposed on one surface of a liquid crystal shutter device for transmitting or intercepting light by the application of a voltage across electrode groups. This color filter layer is formed of photosensitive emulsion layers which are sensitive to specific color light respectively and provided on a transparent plate. While illuminating the liquid crystal shutter device from the other surface thereof by specific color light sequentially. The voltage is applied across selected opposed electrode groups to form latent images in alignment with the positions of the electrode groups. Then, the latent images are developed to produce colors. In this manner, filter layers are made in alignment with the shutter device.

Abstract: A method of manufacturing insulated gate thin film field effect transistors is disclosed in which first and second closely adjacent anodic oxidation electrodes are formed on an electrically insulating substrate, and a semiconducting layer is formed on the insulating substrate and the first and second anodic oxidation electrodes. An anodic oxidation of the semiconducting layer is performed, utilizing the first and second anodic oxidation electrodes, to form an oxide layer on the semiconducting layer. The oxide layer is then patterned to form a gate insulator and the semiconducting layer is patterned to expose a portion of each of the first and second anodic oxidation electrodes. The exposed portions of the first and second anodic oxidation electrodes are patterned to form source and drain electrodes, respectively.