Abstract: A photoelectric display unit including a bottom electrode layer, a photoelectric conversion layer and a top electrode layer is provided. The photoelectric conversion layer is disposed between the bottom electrode layer and the top electrode layer, and includes a first extrinsic semiconductor layer, an intrinsic semiconductor layer and a second extrinsic semiconductor layer. The intrinsic semiconductor layer is disposed between the first extrinsic semiconductor layer and the second extrinsic semiconductor layer. The intrinsic semiconductor layer includes a semiconductor material with a range of a band gap of 1.7 ev˜3.2 ev.

Abstract: A front electrode layer of a thin film solar cell is provided. The front electrode layer includes a first transparent conductive layer and a second transparent conductive layer. The first transparent conductive layer is disposed on a substrate, and the second transparent conductive layer is disposed on the first transparent conductive layer, wherein the first transparent conductive layer is located between the substrate and the second transparent conductive layer, and wherein a surface roughness of the second transparent conductive layer is lower than a surface roughness of the first transparent conductive layer.

Abstract: A manufacturing method of a front electrode layer of a thin film solar cell including steps below is provided. First, a first transparent conductive layer having a plurality of microstructures is formed on a substrate. Then, a second transparent conductive layer is formed on a surface having the plurality of microstructures of the first transparent conductive layer. A front electrode layer of a thin film solar cell is also provided.

Abstract: A photoelectric display unit including a bottom electrode layer, a photoelectric conversion layer and a top electrode layer is provided. The photoelectric conversion layer is disposed between the bottom electrode layer and the top electrode layer, and includes a first extrinsic semiconductor layer, an intrinsic semiconductor layer and a second extrinsic semiconductor layer. The intrinsic semiconductor layer is disposed between the first extrinsic semiconductor layer and the second extrinsic semiconductor layer. The intrinsic semiconductor layer includes a semiconductor material with a range of a band gap of 1.7 ev˜3.2 ev.