Patents by Inventor Kang-go Chung
Kang-go Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190264035Abstract: A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.Type: ApplicationFiled: April 18, 2019Publication date: August 29, 2019Applicant: JSR CORPORATIONInventors: Shun AOKI, Kang-go CHUNG, Yuushi MATSUMURA, Tomohiro MATSUKI, Yoshio TAKIMOTO
-
Publication number: 20180211828Abstract: A composition for forming a film for use in cleaning a semiconductor substrate includes a solvent and a compound having a molecular weight of no s less than 300 and comprising a polar group, a group represented by a formula (i) or a combination thereof. In the formula (i), R1 represents a group that is dissociated by heat or an action of an acid. The polar group is preferably a hydroxy group, a carboxy group, an amide group, an amino group, a sulfonyl group, a sulfo group or a combination thereof. The compound is preferably a polymer having a weight average molecular weight of no less than 300 and no greater than 50,000. The polymer is preferably a ring polymer having a weight average molecular weight of no less than 300 and no greater than 3,000.Type: ApplicationFiled: March 23, 2018Publication date: July 26, 2018Applicant: JSR CORPORATIONInventors: Kang-go CHUNG, Yuushi Matsumura, Yoshio Takimoto
-
Publication number: 20180068863Abstract: A treatment agent for inhibiting substrate pattern collapse contains a polymer and a polar solvent. A treatment method of a substrate includes: applying the treatment agent onto a substrate having a pattern formed thereon; and drying the treatment agent applied onto the substrate. The polymer is preferably a hydrophilic polymer. In addition, the polymer preferably has at least one functional group selected from a hydroxy group, a carboxy group, an amide group, an amino group, a sulfo group and an aldehyde group. Furthermore, the polymer is preferably one selected from a vinyl polymer, a polysaccharide, a polyester, a polyether and a polyamide.Type: ApplicationFiled: November 14, 2017Publication date: March 8, 2018Applicant: JSR CORPORATIONInventors: Kenji FUJITA, Yoshio TAKIMOTO, Kang-go CHUNG
-
Patent number: 8999442Abstract: Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained. A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).Type: GrantFiled: October 20, 2010Date of Patent: April 7, 2015Assignee: JSR CorporationInventors: Ryuichi Saito, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai
-
Publication number: 20120282414Abstract: Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained. A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).Type: ApplicationFiled: October 20, 2010Publication date: November 8, 2012Applicant: JSR CorporationInventors: Ryuichi Saito, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai
-
Patent number: 8278471Abstract: A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.Type: GrantFiled: October 24, 2011Date of Patent: October 2, 2012Assignees: JSR Corporation, Tri Chemical Laboratories Inc.Inventors: Ryuuichi Saitou, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai, Sanshiro Komiya, Naoto Noda, Maki Nishiguchi
-
Publication number: 20120101290Abstract: A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.Type: ApplicationFiled: October 24, 2011Publication date: April 26, 2012Applicants: TRI Chemical Laboratories, Inc., JSR CORPORATIONInventors: Ryuuichi SAITOU, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai, Sanshiro Komiya, Naoto Noda, Maki Nishiguchi
-
Patent number: 8097745Abstract: A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.Type: GrantFiled: March 30, 2010Date of Patent: January 17, 2012Assignee: JSR CorporationInventors: Yohei Nobe, Kang-go Chung, Ryuichi Saito
-
Patent number: 8093419Abstract: A method of producing an organosilicon compound includes substituting at least an OR1 group of a compound shown by the following general formula (1) to obtain a compound shown by the following general formula (2), Si(OR1)3-mY1m—R2—Si(OR3)3-nY2n??(1) Si(OR4)3-mY1m—R2—Si(OR4)3-nY2n??(2).Type: GrantFiled: May 28, 2009Date of Patent: January 10, 2012Assignee: JSR CorporationInventors: Youhei Nobe, Hisashi Nakagawa, Kang-go Chung
-
Publication number: 20110082309Abstract: A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.Type: ApplicationFiled: March 30, 2010Publication date: April 7, 2011Applicant: JSR CORPORATIONInventors: Youhei Nobe, Kang-go Chung, Ryuuichi Saitou
-
Publication number: 20110042789Abstract: A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.Type: ApplicationFiled: March 24, 2009Publication date: February 24, 2011Applicant: JSR CorporationInventors: Hisashi Nakagawa, Yohei Nobe, Kang-go Chung, Ryuichi Saito, Terukazu Kokubo
-
Publication number: 20090299086Abstract: A method of producing an organosilicon compound includes substituting at least an OR1 group of a compound shown by the following general formula (1) to obtain a compound shown by the following general formula (2), Si(OR1)3-mY1m—R2—Si(OR3)3-nY2n??(1) Si(OR4)3-mY1m—R2—Si(OR4)3-nY2n??(2).Type: ApplicationFiled: May 28, 2009Publication date: December 3, 2009Applicant: JSR CORPORATIONInventors: Youhei NOBE, Hisashi Nakagawa, Kang-go Chung
-
Publication number: 20090233103Abstract: A radiation-curable resin composition for optical parts comprising (A) 5% to 70% by weight of a urethane (meth)acrylate which is a reaction product of (a) a (meth)acrylate having a hydroxyl group, (b) a polyisocyanate having an aromatic ring, (c) a polyol, and (d) an alcohol having 1 to 4 carbon atoms without a polymerizable unsaturated group, and which has (meth)acryloyl groups in an amount of 40% to 85% by mole of its molecular ends on average of the reaction product; and (B) 10% to 80% by weight of a compound, other than the component (A), having an ethylenically unsaturated group is provided. A cured product of the composition exhibits a high refractive index, excellent property of adhesion to various plastic substrates, appropriate hardness, and little sign of yellowing.Type: ApplicationFiled: June 15, 2006Publication date: September 17, 2009Inventors: Kang-go Chung, Satoshi Futami, Hiroshi Miyao, Takayoshi Tanabe