Patents by Inventor KANG HUA CHANG

KANG HUA CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-throughput system and method for post-implantation single wafer warm-up
    Patent number: 9982338
    Abstract: A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: May 29, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsun-Jen Chan, Cheng-Hung Hu, Yi-Hann Chen, Kang Hua Chang, Ming-Te Chen
  • High-Throughput System and Method for Post-Implantation Single Wafer Warm-Up
    Publication number: 20170247790
    Abstract: A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.
    Type: Application
    Filed: May 17, 2017
    Publication date: August 31, 2017
    Inventors: Tsun-Jen Chan, Cheng-Hung Hu, Yi-Hann Chen, Kang Hua Chang, Ming-Te Chen
  • High-throughput system and method for post-implantation single wafer warm-up
    Patent number: 9663854
    Abstract: A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Jen Chan, Cheng-Hung Hu, Yi-Hann Chen, Kang Hua Chang, Ming-Te Chen
  • High-Throughput System and Method for Post-Implantation Single Wafer Warm-Up
    Publication number: 20140273421
    Abstract: A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: TSUN-JEN CHAN, CHENG-HUNG HU, YI-HANN CHEN, KANG HUA CHANG, MING-TE CHEN