Abstract: A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition containing an organic alkaline compound, an oxidizing agent selected from sodium chlorite and/or potassium bromate, silicon oxide abrasive particles, and a solvent to simultaneously remove Si and conductive materials at their respective removal rates. By using the method of this invention, Si and conductive materials can be simultaneously polished at higher removal rates to significantly save the necessary working-hour costs for polishing TSV wafers. A polishing composition used in the above method is also provided.

Abstract: A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition containing an organic alkaline compound, an oxidizing agent selected from sodium chlorite and/or potassium bromate, silicon oxide abrasive particles, and a solvent to simultaneously remove Si and conductive materials at their respective removal rates. By using the method of this invention, Si and conductive materials can be simultaneously polished at higher removal rates to significantly save the necessary working-hour costs for polishing TSV wafers. A polishing composition used in the above method is also provided.

Abstract: The invention provides a chemical mechanical abrasive composition for use in semiconductor processing, which comprises phosphorous acid and/or a salt thereof as an abrasive enhancer. The chemical mechanical abrasive composition of the invention can be in the form of a slurry which comprises 70-99.5% by weight of an aqueous medium, 0.1-25% by weight of an abrasive, and 0.01-2% by weight of said abrasion enhancer. The chemical mechanical abrasive composition of the invention may further comprise an abrasion co-enhancer selected from an amino acid, a salt thereof, a carboxylic acid, a salt thereof, or a mixture of the acids and/or salts.

Abstract: The invention provides a chemical mechanical abrasive composition for use in semiconductor processing, which comprises phosphorous acid and/or a salt thereof as an abrasive enhancer. The chemical mechanical abrasive composition of the invention can be in the form of a slurry which comprises 70-99.5% by weight of an aqueous medium, 0.1-25% by weight of an abrasive, and 0.01-2% by weight of said abrasion enhancer. The chemical mechanical abrasive composition of the invention may further comprise an abrasion co-enhancer selected from an amino acid, a salt thereof, a carboxylic acid, a salt thereof, or a mixture of the acids and/or salts.

Abstract: The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises an aqueous medium, an abrasive, and an abrasion accelerator. The abrasion accelerator mainly functions to enhance the removal rate of the substances to be removed, and selected from the compounds of the following formula, the acid-addition salts thereof, or mixtures of two or more of the foregoing compounds and salts: wherein X and Y are independently lone-pair electrons containing atoms or atomic groups; and R1 and R2 are independently H, alky, amino, aminoalkyl, or alkoxy. The chemical-mechanical abrasive composition of the invention may optionally comprise an acidic component and/or a salt thereof, so as to further enhance the abrasion rate. The invention further provides a method of using the above chemical-mechanical abrasive composition for polishing the surface of a semiconductor wafer.