Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: A method includes forming a die, which includes forming a first metal pillar on a first side of a first semiconductor substrate of the die, polishing the first semiconductor substrate of the die to reveal a first through-via in the first semiconductor substrate, and forming a second metal pillar on a second side of the die. The first side and the second side are on opposite sides of the first semiconductor substrate. The method further includes encapsulating the die in an encapsulant, forming a first conductive feature on the first side of the first semiconductor substrate and electrically connecting to the first metal pillar, and forming a second conductive feature on the second side of the first semiconductor substrate and electrically connecting to the second metal pillar.

Abstract: The method includes: A residential gateway receives a packet from a terminal device that accesses the residential gateway, where the packet includes a first DSCP value and first indication information, the first indication information includes an identifier of a public land mobile network of the terminal device or an IP address of a first access network device, and the first access network device is located in the public land mobile network of the terminal device; the residential gateway determines, based on the first indication information and the first DSCP value, a QoS requirement corresponding to the first indication information and the first DSCP value; and the residential gateway sends the packet based on the QoS requirement.

Abstract: The present disclosure provides a hybrid membrane based on UiO66 modification, a preparation method of the hybrid membrane, and a use of the hybrid membrane in a flow battery. A matrix of the hybrid membrane is doped with carbonized UiO-66, and a surface of the carbonized UiO-66 is further modified with ?-CD.

Abstract: The present disclosure provides a hybrid membrane based on UiO66 modification, a preparation method of the hybrid membrane, and a use of the hybrid membrane in a flow battery. A matrix of the hybrid membrane is doped with carbonized UiO-66, and a surface of the carbonized UiO-66 is further modified with ?-CD.

Abstract: A method includes forming a first conductive pillar on an interposer; forming a second conductive pillar on the interposer, wherein the second conductive pillar includes a barrier layer; bonding a first semiconductor device to the first conductive pillar by a first bonding region that includes more inter-metallic compound than solder; and bonding the first semiconductor device to the second conductive pillar by a second bonding region that includes more solder than inter-metallic compound.

Abstract: This application provides methods and apparatuses, and relates to the field of communication technologies, A method includes a first network element receives a first message from an access network device, where the first message includes identification information of a terminal, identifies a terminal type, and if the terminal type is a first terminal type, sends the identification information of the terminal to an application server, or if the terminal type is a second terminal type, triggers an authentication procedure of the terminal.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: A communication method and apparatus are provided. The method includes: A first communication apparatus receives a first request, where the first request indicates the first communication apparatus to obtain information about a first tag. The first communication apparatus obtains the information about the first tag based on the first request, where the information about the first tag includes an identifier of the first tag. According to the method, after obtaining the information about the first tag, the first communication apparatus determines the corresponding first communication session for the information about the first tag, so that it can be ensured that the first communication apparatus can effectively and accurately transmit the information about the first tag by using the first communication session.

Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes: providing an interposer having a front surface and a back surface, the interposer comprising a substrate, at least one routing region, and at least one non-routing region; forming at least one warpage-reducing trench in the at least one non-routing region, wherein the at least one warpage-reducing trench extends from the front surface of the interposer to a first depth, the first depth smaller than a thickness between the front surface and the back surface of the interposer; depositing a warpage-relief material in the at least one warpage-reducing trench; and bonding the group of IC dies to the front surface of the interposer.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: This application provides a communication method and apparatus, to provide a non-3GPP path switching solution in a multi-access session. The method includes: A session management device determines to perform non-3GPP transmission path switching in a multi-access session, where the multi-access session includes at least two non-3GPP transmission paths; and the session management device sends a first offloading rule to a user plane device, where the first offloading rule is for supporting the user plane device in determining a first target transmission path from at least two non-3GPP transmission paths. According to the method, when it is determined to perform non-3GPP path switching, UE and a UPF can select, in a switching process based on a new offloading rule, an appropriate path from a plurality of non-3GPP access paths for data transmission, to ensure service continuity during session switching.

Abstract: This application relates to the field of communication technologies, and provides an access network device determining method and an apparatus, to resolve may fail to access, when requesting to access a network through the non-3GPP access network device, a network slice that the terminal device requests to access. The method includes: The terminal device sends a first message to a mobility management device through a first access network device, where the first message includes an identifier of at least one network slice, and indicates a request for accessing the network slice; receives a second message through the first access network device or a second access network device, where the second message includes information about the second access network device, and indicates that the second access network device supports one or more of the at least one network slice; and establishes a connection to the second access network device.

Abstract: A snow thrower includes a body including a working assembly; a handle for a user to hold and connected to the body; and an energy device for providing the snow thrower with electrical energy. The snow thrower further includes a control module having a power-on state for being powered by the energy device; an operating device configured to be operated by the user to send a temperature control signal to a wireless communication module when separated from the snow thrower; and the wireless communication module configured to transmit the temperature control signal to the control module. The control module is switched to the power-on state according to the temperature control signal, and the control module in the power-on state controls the temperature of at least part of the snow thrower.

Abstract: Provided are semiconductor devices and methods for fabricating such devices. An exemplary method includes forming fin structures separated by an isolation material; depositing a high-k material over the fin structures and isolation material, wherein the high-k material includes lower portions located between fin structures and an upper portion located above the fin structures; depositing a topography-improving capping layer over the high-k material; performing a chemical mechanical planarization (CMP) process to remove the capping layer and the upper portion of the high-k material and to define high-k insulation segments.

Abstract: The systems and methods described can include approaches to calibrate head-mounted displays for improved viewing experiences. Some methods include receiving data of a first target image associated with an undeformed state of a first eyepiece of a head-mounted display device; receiving data of a first captured image associated with deformed state of the first eyepiece of the head-mounted display device; determining a first transformation that maps the first captured image to the image; and applying the first transformation to a subsequent image for viewing on the first eyepiece of the head-mounted display device.

Abstract: A communication method and an apparatus to reduce signaling overheads in a registration process of a terminal device. The method includes: receiving a registration request from a read/write device, sending a transmission request to an application network element, and notifying the read/write device of a registration success. The registration request includes identification information of the terminal device, the registration request is used to request to register the identification information with a network, the transmission request includes the identification information, and the transmission request is used to request to transmit the identification information to the application network element.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.

Abstract: A package comprises an interposer, comprising an interposer substrate including at least one layer, and a plurality of RDLs formed through at least a portion of the interposer substrate. The package also includes a die device structure comprising at least one device die, and a first test line (TL) structure interposed between the interposer and the die device structure. The first TL structure includes at least one first test line electrically coupled to the at least one device die, at least a portion of the at least one first test line extending beyond a peripheral edge of the die device structure to provide an electrical interface with the at least one device die.