Abstract: Disclosed is an LCD device which facilitates to improve transmittance for each colored light by a design capable of realizing an optimal cell gap for each of sub-pixels, and a method for manufacturing the same. The LCD device comprises first and second substrates confronting each other; a liquid crystal layer between the first and second substrates; and first, second, and third sub-pixels, wherein a cell gap of the first sub-pixel is larger than a cell gap of the third sub-pixel.

Abstract: A liquid crystal display device includes first and second substrates facing each other, wherein a pixel region is defined on the first and second substrates, first and second grooves formed on an inner surface of the first substrate, a gate line formed in the first groove along a direction, a common line formed in the second groove and parallel to the gate line, a data line crossing the gate line to define the pixel region, a thin film transistor connected to the gate line and the data line, and a light-shielding pattern of a black inorganic material and around the gate line, the data line and the common line.

Abstract: A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-d

Abstract: A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern on a substrate, forming a metal material of liquid phase on a substrate provided with the organic material pattern, hardening the metal material of liquid phase, and removing the metal material located on the organic material pattern, allowing some metal material to be left at an area non-overlapped with the organic material pattern.

Abstract: A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern on a substrate, forming a metal material of liquid phase on a substrate provided with the organic material pattern, hardening the metal material of liquid phase, and removing the metal material located on the organic material pattern, allowing some metal material to be left at an area non-overlapped with the organic material pattern.

Abstract: A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern on a substrate, forming a metal material of liquid phase on a substrate provided with the organic material pattern, hardening the metal material of liquid phase, and removing the metal material located on the organic material pattern, allowing some metal material to be left at an area non-overlapped with the organic material pattern.