Abstract: A semiconductor device includes a common conductive line extending in a first direction; a memory cell array including a plurality of horizontal layers stacked in the first direction while sharing the common conductive line; and a selector structure operatively coupled to the common conductive line, wherein the selector structure includes, a plurality of select transistors stacked in the first direction; and a selector commonly coupled to the select transistors.

Abstract: A wiring modularized battery transport system and a method of constructing the same are provided. The battery transport system includes a first wiring portion including a plurality of transport members configured to transport a transport object in a predetermined direction, a second wiring portion including local panel electrically connected to at least one of the plurality of transport members, a third wiring portion including a wiring panel electrically connected to the local panel and supplying power to the local panel, and a connector respectively provided in the first wiring portion, the second wiring portion, and the third wiring portion, and electrically connecting the first wiring portion, the second wiring portion, and the third wiring portion to each other. The connector connects the first wiring portion, the second wiring portion, and the third wiring portion to each other in a detachable manner.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a well structure, a first channel pillar and a second channel pillar extending from an inside of the well structure in an upward direction, a semiconductor pattern coupled between the first channel pillar and the second channel pillar and having a gap disposed in a central region of the semiconductor pattern, and a source junction formed in the semiconductor pattern.

Abstract: A semiconductor device includes a first gate stack structure and a second gate stack structure, which face each other; channel patterns extending in a first direction to penetrate the first gate stack structure and the second gate stack structure; memory patterns extending along outer walls of the channel patterns; and a source contact structure disposed between the first gate stack structure and the second gate stack structure, wherein the source contact structure includes a vertical part extending in the first direction and horizontal protrusion parts protruding toward a sidewall of the first gate stack structure and a sidewall of the second gate stack structure from both sides of the vertical part.

Abstract: Therapeutic compositions comprising one or more agents that inhibit CXXC5-DVL interface, and methods of administering those therapeutic compositions to model, treat, reduce resistance to treatment, prevent, and diagnose a condition/disease associated with a metabolic disease or a related clinical condition thereof, are disclosed.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a well structure, a first channel pillar and a second channel pillar extending from an inside of the well structure in an upward direction, a semiconductor pattern coupled between the first channel pillar and the second channel pillar and having a gap disposed in a central region of the semiconductor pattern, and a source junction formed in the semiconductor pattern.

Abstract: A method of manufacturing a semiconductor device may include forming a stack with alternately stacked first material layers and second material layers, forming a first opening that passes through the stack, forming a blocking layer in the first opening, forming a data storage layer in the blocking layer, forming a slit passing through the stack, forming second openings by selectively removing the second material layers through the slit, selectively forming a protective layer on exposed surfaces of the first material layers, etching the blocking layer through the second 10 openings, oxidizing the protective layer, and forming insulating layers in the second openings.

Abstract: The present disclosure, in general, relates to a technology of recording and playing a surround view monitoring (SVM) video for a vehicle. In particular, the present disclosure relates to a technology of providing reenaction of drive situation for assisting a user to be able to minutely understand the situation at a specific time point in the past, by recording videos of multi-channel cameras installed on a vehicle for SVM, and providing a SVM environment as in an actual driving after a predetermined time with reenacting a situation around the vehicle at the moment of SVM recording by use of the recorded video files. According to the present disclosure, there is an advantage that a user (e.g., a driver) can minutely know the situation around a vehicle at the moment of an accident because the situation around a vehicle at the moment accident is reenacted in SVM environment.

Abstract: A semiconductor device includes a first gate stack structure and a second gate stack structure, which face each other; channel patterns extending in a first direction to penetrate the first gate stack structure and the second gate stack structure; memory patterns extending along outer walls of the channel patterns; and a source contact structure disposed between the first gate stack structure and the second gate stack structure, wherein the source contact structure includes a vertical part extending in the first direction and horizontal protrusion parts protruding toward a sidewall of the first gate stack structure and a sidewall of the second gate stack structure from both sides of the vertical part.

Abstract: The present invention relates to a method of producing and refining carrier-free lutetium-177 using chromatography, and more specifically to a method of producing and refining carrier-free lutetium 1-77 using chromatography having excellent resolution of lutetium and ytterbium without a concentration gradient of an eluent.

Abstract: A method of manufacturing a semiconductor device may include forming a stack with alternately stacked first material layers and second material layers, forming a first opening that passes through the stack, forming a blocking layer in the first opening, forming a data storage layer in the blocking layer, forming a slit passing through the stack, forming second openings by selectively removing the second material layers through the slit, selectively forming a protective layer on exposed surfaces of the first material layers, etching the blocking layer through the second openings, oxidizing the protective layer, and forming insulating layers in the second openings.

Abstract: Mechanisms are disclosed for estimating cardinality of group-by queries. A probability of occurrence of values is obtained for columns that satisfy the query occurring in tables from a trained machine learning model. A range selectivity is calculated based on a conditional probability of occurrence of the values. A set of valid generated sample tuples is generated from the trained machine learning model. A group-by selectivity is calculated by keeping the conditional probability of occurrence to obtain probabilities that a result set will have specific group-by column values associated with the tables while proceeding with progressive sampling. A sampling probability is calculated by normalizing the group-by selectivity by dividing the group-by selectivity by the range selectivity. The samples are filtered such that the samples having a sampling probability below a sampling probability threshold are filtered out. A sampling-based estimator is applied to the filtered samples set to estimate the cardinality.

Abstract: A semiconductor device including highly integrated memory cells and a method for fabricating the same. The semiconductor device may include: a vertical conductive line; a horizontal layer horizontally oriented from the vertical conductive line and including a first horizontal portion and a second horizontal portion thinner than the first horizontal portion; a horizontal conductive line crossing the first horizontal portion of the horizontal layer; and a data storage element including a first electrode including a merged double cylinder coupled to the second horizontal portion of the horizontal layer.

Abstract: A method for fabricating a semiconductor device includes: forming a semiconductor layer pattern over a lower structure; forming a gate dielectric layer to cover surfaces of the semiconductor layer pattern; forming a conductive layer over the gate dielectric layer to surround the semiconductor layer pattern, the conductive layer including a first edge portion and a second edge portion that are facing each other; and forming a pair of horizontal conductive lines vertically overlapping the semiconductor pattern by horizontally recessing the first edge portion and the second edge portion of the conductive layer.

Abstract: Despite the increase of memory capacity and CPU computing power, memory performance remains the bottleneck of in-memory database management systems due to ever-increasing data volumes and application demands. Because the scale of data workloads has out-paced traditional CPU caches and memory bandwidth, one can improve data movement from memory to computing units to improve performance in in-memory database scenarios. A near-memory database accelerator framework offloads data-intensive database operations via or to a near-memory computation engine. The database accelerator's system architecture can include a database accelerator software module/driver and a memory module with a database accelerator engine. An application programming interface (API) can be provided to support database accelerator functionality. Memory of the database accelerator can be directly accessible by the CPU.

Abstract: Mechanisms are disclosed for estimating cardinality of group-by queries. A probability of occurrence of values is obtained for columns that satisfy the query occurring in tables from a trained machine learning model. A range selectivity is calculated based on a conditional probability of occurrence of the values. A set of valid generated sample tuples is generated from the trained machine learning model. A group-by selectivity is calculated by keeping the conditional probability of occurrence to obtain probabilities that a result set will have specific group-by column values associated with the tables while proceeding with progressive sampling. A sampling probability is calculated by normalizing the group-by selectivity by dividing the group-by selectivity by the range selectivity. The samples are filtered such that the samples having a sampling probability below a sampling probability threshold are filtered out. A sampling-based estimator is applied to the filtered samples set to estimate the cardinality.

Abstract: Proposed is a heat dissipating device using turbulent flow. In the heat dissipating device, a plurality of block flow paths are formed in parallel inside a block body, a first cap and a second cap are mounted on side surfaces of the respective ends of the block body so as to connect the block flow paths, a working fluid flows into the block flow paths, and the working fluid which has passed through the block flow paths is transferred to the outside. Turbulence generators are mounted inside the block flow paths, and finishing end portions on the respective ends of the turbulence generators are supported by the first cap and the second cap and are positioned inside the block flow paths.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes: a substrate including a peripheral circuit, a gate stack structure disposed over the substrate and including a cell array region and a stepped region that extends from the cell array region, a channel structure passing through the cell array region of the gate stack structure, a memory layer surrounding a sidewall of the channel structure, a first contact plug passing through the stepped region of the gate stack structure, and an insulating structure surrounding a sidewall of the first contact plug to insulate the first contact plug from the gate stack structure.

Abstract: Provided herein may be a semiconductor device. The semiconductor device may include a first stacked body including a first stacked insulating layer and a first stacked conductive layer that are alternately stacked; a capacitor plug passing through the first stacked body; and a capacitor multi-layered layer configured to enclose the capacitor plug. The capacitor plug may include metal.

Abstract: Provided is a high-strength hot-dip galvanized steel sheet having excellent ductility and formability. The hot-dip galvanized steel sheet contains, by wt %, 0.06 to 0.16% of carbon (C), 0.8% or less (excluding 0%) of silicon (Si), 2.1 to 2.7% of manganese (Mn), 0.4% or less (excluding 0%) of molybdenum (Mo), 1% or less (excluding 0%) of chromium (Cr), 0.1% or less (excluding 0%) of phosphorus (P), 0.02% or less of sulfur (S), 1% or less (excluding 0%) of aluminum (sol.Al), 0.001 to 0.04% of titanium (Ti), 0.001 to 0.04% of niobium (Nb), 0.01% or less (excluding 0%) of nitrogen (N), 0.01% or less of boron (B), 0.05% or less of antimony (Sb), and a balance of Fe and unavoidable impurities.