Abstract: A method for manufacturing a conductive film, the method comprising the steps of: preparing a mixture liquid in which a catalytic metal is dispersed in a precursor or a precursor compound of a two-dimensional nanomaterial; and forming a catalytic metal/two-dimensional nanomaterial by irradiating the mixture liquid with ultrasonic waves to generate microbubbles, degrading the precursor compound using energy, which is generated when the microbubbles burst, to synthesize the two-dimensional nanomaterial on an outer wall of the catalytic metal, wherein the method further comprises: dispersing the catalytic metal/two-dimensional nanomaterial in a dispersion to prepare ink; and applying the ink on a substrate and performing rapid air-sintering. Thus, the two-dimensional nanomaterial is synthesized on an outer wall of a non-noble metal having high oxidative characteristics, thereby preventing oxidation of the metal from air and increasing thermal conductivity and electrical conductivity.

Abstract: Disclosed is a method of manufacturing a work function-controlled carbon nanomaterial and metal nanowire hybrid transparent conductive film, including: a first step of modifying the surface of a carbon nanomaterial to introduce a functional group to a conductive carbon nanomaterial; a second step of forming a work function-reduced carbon nanomaterial dispersed solution by mixing and reacting the carbon nanomaterial, which is functionalized in the first step, with an isocyanate-based compound and a pyrimidine-based compound; a third step of forming a single-component coating solution by hybridizing the work function-reduced carbon nanomaterial dispersed solution obtained in the second step with a metal nanowire; and a fourth step of forming a film by applying the coating solution, which is formed in the third step, on a substrate.

Abstract: A method for manufacturing a conductive film, the method comprising the steps of: preparing a mixture liquid in which a catalytic metal is dispersed in a precursor or a precursor compound of a two-dimensional nanomaterial; and forming a catalytic metal/two-dimensional nanomaterial by irradiating the mixture liquid with ultrasonic waves to generate microbubbles, degrading the precursor compound using energy, which is generated when the microbubbles burst, to synthesize the two-dimensional nanomaterial on an outer wall of the catalytic metal, wherein the method further comprises: dispersing the catalytic metal/two-dimensional nanomaterial in a dispersion to prepare ink; and applying the ink on a substrate and performing rapid air-sintering. Thus, the two-dimensional nanomaterial is synthesized on an outer wall of a non-noble metal having high oxidative characteristics, thereby preventing oxidation of the metal from air and increasing thermal conductivity and electrical conductivity.

Abstract: The present invention relates to a highly conductive material formed by hybridization of a metal nanomaterial and a carbon nanomaterial having a higher-order structure due to multiple hydrogen bonding, and to a manufacturing method therefor. The technical essence of the present invention is a highly conductive material formed by hybridization of a metal nanomaterial and a carbon nanomaterial having a higher-order structure due to multiple hydrogen bonding the invention involving: forming a carbon nanomaterial having a higher-order structure due to multiple hydrogen bonding between conductive carbon nanomaterials by introducing a functional group capable of multiple hydrogen bonding to the carbon nanomaterials; forming a composite material by mixing the carbon nanomaterial having a higher-order structure and a metal nanomaterial.

Abstract: Disclosed is a method of manufacturing a work function-controlled carbon nanomaterial and metal nanowire hybrid transparent conductive film, including: a first step of modifying the surface of a carbon nanomaterial to introduce a functional group to a conductive carbon nanomaterial; a second step of forming a work function-reduced carbon nanomaterial dispersed solution by mixing and reacting the carbon nanomaterial, which is functionalized in the first step, with an isocyanate-based compound and a pyrimidine-based compound; a third step of forming a single-component coating solution by hybridizing the work function-reduced carbon nanomaterial dispersed solution obtained in the second step with a metal nanowire; and a fourth step of forming a film by applying the coating solution, which is formed in the third step, on a substrate.

Abstract: The present invention relates to a highly conductive material formed by hybridization of a metal nanomaterial and a carbon nanomaterial having a higher-order structure due to multiple hydrogen bonding, and to a manufacturing method therefor. The technical essence of the present invention is a highly conductive material formed by hybridization of a metal nanomaterial and a carbon nanomaterial having a higher-order structure due to multiple hydrogen bonding the invention involving: forming a carbon nanomaterial having a higher-order structure due to multiple hydrogen bonding between conductive carbon nanomaterials by introducing a functional group capable of multiple hydrogen bonding to the carbon nanomaterials; forming a composite material by mixing the carbon nanomaterial having a higher-order structure and a metal nanomaterial.

Abstract: An organic insulating layer composition includes a polymer mixture including 50 parts to 90 parts by volume of an organic polymer and 10 parts to 50 parts by volume of an amorphous polymer, wherein the organic polymer includes at least a first repeating unit and a second repeating unit, the first and second repeating units each being substituted with at least one of fluorine or chlorine, a total number of fluorine and chlorine atoms in the first repeating unit being different from a total number of fluorine and chlorine atoms in the second repeating unit, and an organic solvent.

Abstract: A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.

Abstract: A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.

Abstract: An organic insulating layer composition includes a polymer mixture including 50 parts to 90 parts by volume of an organic polymer and 10 parts to 50 parts by volume of an amorphous polymer, wherein the organic polymer includes at least a first repeating unit and a second repeating unit, the first and second repeating units each being substituted with at least one of fluorine or chlorine, a total number of fluorine and chlorine atoms in the first repeating unit being different from a total number of fluorine and chlorine atoms in the second repeating unit, and an organic solvent.

Abstract: A flexible flat cable capable of minimizing distortion and interference of a signal and a manufacturing method thereof are provided. The cable includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: Provided are methods of and apparatuses for forming a metal pattern. In the method, an initiator and a metal pattern are sequentially combined on a previously-formed bonding agent pattern improving adhesion and/or junction properties between the substrate and the metal. The bonding agent pattern may be formed using a reverse offset printing method. The metal pattern may be formed using an electroless electrochemical plating method. The metal pattern can be formed with improved uniformity in thickness and planar area.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

Abstract: Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating.

Abstract: Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.

Abstract: A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film.

Abstract: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.