Abstract: A light-emitting diode (LED) driving circuit configured to drive LED units includes a rectification circuit unit to receive an alternating current (AC) power voltage and rectify the AC power voltage to output a unidirectional ripple voltage, a pulse-width modulation (PWM) signal generation unit to generate PWM decision signals. The PWM signal generation unit is configured to sequentially drive the LEDs according to the PWM decision signals.

Abstract: An LED driving circuit package includes a rectification unit to receive an AC power voltage and rectify the AC power voltage to generate a ripple voltage, an LED driving switching unit including a plurality of switch units and a plurality of current control units. The LED driving circuit package further includes a low voltage control unit including a circuit power supply unit to generate low voltage power, a voltage detection unit to detect a magnitude of the ripple voltage, a reference frequency generation unit to generate a reference frequency, and a reference pulse generation unit to generate a reference pulse for controlling the operation of the LED driving switch unit according to the reference frequency and a magnitude of the voltage detected by the voltage detection unit.

Abstract: A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.

Abstract: Disclosed are a group III-V based transistor and a method for manufacturing same. The group III-V based transistor includes a laminated semiconductor structure having an upper surface and a lower surface and including a group III-V based semiconductor layer, and at least one 2DEG region extending from the upper surface of the laminated semiconductor structure to the lower surface thereof. A vertical-type GaN-based transistor using 2DEG can be provided by adopting the 2DEG region.

Abstract: A light-emitting diode (LED) driving circuit configured to drive LED units includes a rectification circuit unit to receive an alternating current (AC) power voltage and rectify the AC power voltage to output a unidirectional ripple voltage, a pulse-width modulation (PWM) signal generation unit to generate PWM decision signals. The PWM signal generation unit is configured to sequentially drive the LEDs according to the PWM decision signals.

Abstract: A GaN-based diode may include an intrinsic GaN-based semiconductor layer, GaN-based semiconductor layers configured to have a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer. A first electrode made of metal is placed on a surface opposite a surface bonded to the GaN-based semiconductor layers of the intrinsic GaN-based semiconductor layer; a second electrode is placed on a surface opposite to a surface bonded to the intrinsic GaN-based semiconductor layer of the GaN-based semiconductor layers of the first conductivity type. Voltage-resistant layers configured to have a second conductivity type are formed in regions of the intrinsic GaN-based semiconductor layer that come in contact with edges of the first electrode.

Abstract: An LED luminescence apparatus includes a plurality of LED units connected in series which are configured to receive a unidirectional ripple voltage, a plurality of switch units, one end of each being connected to the cathode of one of the plurality of LED units, a plurality of constant current control circuit units, one end of each being connected to an another end of a respective switch unit to receive a current from the respective switch unit, each of the constant current control circuit units being configured to output a current control signal to the respective switch unit to control a magnitude of the received current to have a specific value, and a current comparison unit to receive currents flowing from the plurality of switching units, and generate a plurality of switching control signals for the respective switch units to sequentially drive the plurality of constant current control circuit units.

Abstract: A GaN-based diode may include an intrinsic GaN-based semiconductor layer, GaN-based semiconductor layers configured to have a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer. A first electrode made of metal is placed on a surface opposite a surface bonded to the GaN-based semiconductor layers of the intrinsic GaN-based semiconductor layer; a second electrode is placed on a surface opposite to a surface bonded to the intrinsic GaN-based semiconductor layer of the GaN-based semiconductor layers of the first conductivity type. Voltage-resistant layers configured to have a second conductivity type are formed in regions of the intrinsic GaN-based semiconductor layer that come in contact with edges of the first electrode.

Abstract: A light-emitting diode (LED) luminaire includes a light-emitting part, a rectification unit configured to perform full-wave rectification of an alternating current (AC) voltage to supply a first drive voltage to the light-emitting part, a power factor compensation unit configured to be charged with the first drive voltage during a charge period and supply a second drive voltage to the light-emitting part during a compensation period, and an LED drive controller configured to determine a voltage level of the first drive voltage or the second drive voltage and control sequential driving of the first LED group to the nth LED group according to the determined voltage level, such that at least 60% of the LEDs comprising the light-emitting part emit light during the compensation period. The light-emitting part is configured to emit light by receiving the first drive voltage or the second drive voltage.

Abstract: A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.

Abstract: An LED driving circuit package includes a rectification unit to receive an AC power voltage and rectify the AC power voltage to generate a ripple voltage, an LED driving switching unit including a plurality of switch units and a plurality of current control units. The LED driving circuit package further includes a low voltage control unit including a circuit power supply unit to generate low voltage power, a voltage detection unit to detect a magnitude of the ripple voltage, a reference frequency generation unit to generate a reference frequency, and a reference pulse generation unit to generate a reference pulse for controlling the operation of the LED driving switch unit according to the reference frequency and a magnitude of the voltage detected by the voltage detection unit.

Abstract: A light-emitting diode (LED) luminescence apparatus configured to receive an alternating current (AC) power includes a plurality of LED units, and a plurality of constant current control units electrically connected to the plurality of LED units. The current control units are configured to control current flowing through each of the LED units so that the current has a specific magnitude.

Abstract: An LED luminescence apparatus includes a plurality of LED units connected in series which are configured to receive a unidirectional ripple voltage, a plurality of switch units, one end of each being connected to the cathode of one of the plurality of LED units, a plurality of constant current control circuit units, one end of each being connected to an another end of a respective switch unit to receive a current from the respective switch unit, each of the constant current control circuit units being configured to output a current control signal to the respective switch unit to control a magnitude of the received current to have a specific value, and a current comparison unit to receive currents flowing from the plurality of switching units, and generate a plurality of switching control signals for the respective switch units to sequentially drive the plurality of constant current control circuit units.