Abstract: The present invention relates to an anti-VAMP2 antibody that inhibits SNARE complex and uses thereof, and more specifically, the present invention relates to an anti-VAMP2 antibody or antigen-binding fragments thereof comprising heavy and light chain CDRs of a specific sequence. The anti-VAMP2 antibody is expected to be useful for improving or treating skin wrinkles by inhibiting SNARE complex formation.

Abstract: Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

Abstract: A method for producing biofuel using an electron beam is disclosed. The method for producing biofuel includes: irradiating an electron beam to the vegetable polymer to decompose and sterilize the vegetable polymer, thereby promoting conversion of the vegetable polymer to biomass compared to the traditional methods.

Abstract: An electro-power impact cell used in blasting works includes a first electrode to which a high voltage is applied, the first electrode having a plurality of conductive piece between which nonconductive pieces are disposed so that when the high voltage is applied to the first electrode, arc occur at the nonconductive piece; a second electrode spaced away from the first electrode; and a closed-cartridge enclosing the first and second electrodes while containing electrolyte.

Abstract: A pulse power system includes an energy storing device for storing electric energy; a high power arc switch comprising: a cylindrical housing having a central axis and defining a predetermined discharging region; a first electrode disposed within the cylindrical housing to be movable in a direction of the central axis; a second electrode disposed within the cylindrical housing and spaced away from the first electrode at a predetermined distance, an arc generating between the first and second electrodes as the first electrode approaches the second electrode; an insulating member formed at a portion between the first and second electrodes except for the discharging region; and a solenoid coil for forming a magnetic field within the discharging region in a direction of the central axis, the arc formed between the first and second electrodes being spirally moved in a direction of the central axis by a magnetic field formed in a circular direction by the arc and the magnetic field formed by the solenoid coil in th

Abstract: An industrial X-ray/electron beam source includes an accelerator having a) a coaxial cavity b) an electron gun for emitting an electron beam to be accelerated, c) at least one deflection magnet positioned outside of the cavity, and d) a radio frequency power supply means for supplying power of a radio frequency to the cavity to induce TM010 mode as an accelerating mode in the cavity; and a beam irradiator having a two-dimensional scanning magnet which deflects accelerated beam by the accelerator, an extracting window for extracting the deflected electron beam to be irradiated to an object, and means for guiding the deflected beam toward a center of the extracting window in a radial direction. The source is advantageous in that the electron beams do not intersect inside the cavity, which can reduce beam loss, and that beams or X-rays are irradiated to the object spatially uniformly.

Abstract: The plasma torch has a cathode supporter having a front end and a rear end, mounted on the body at the rear end thereof; a button-cathode for generating plasma arc, which is assembled to the front end of the cathode supporter; a hollow-cathode having an inner surface and an outer surface, surrounding the button-cathode, the inner surface of which is spaced from the button-cathode, being assembled to the cathode supporter, and being made of material with higher work function than material for the button-cathode. The plasma gas flows along the outer surface to accomplish low gas pressure between the inner surface of the hollow-cathode and the button-cathode. A multiple-solenoid coil is adapted to rotate arc root around the button-cathode and to move arc root axially along the surface of the button-cathode.

Abstract: There is disclosed a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process. The silicon field emission emitter in accordance with the embodiment of the present invention includes a silicon substrate of high density, an insulating layer on the silicon substrate of high density, a cavity formed in the insulating layer, an emitter formed with the silicon substrate of high density in a body in the cavity, and a gate electrode formed on the insulating layer. The insulating layer is made of the thermal oxide film having the thickness of 4000 angstroms and the gate electrode coats the emitter tip.

Abstract: A method is disclosed for making a silicon emission emitter for use as electron sources for various display elements, light sources, high-speed switching devices, and micro-sensors. The method relates to the formation of a tip portion of an emitter and an electron range by using a silicide material having a high melting point and a low work function. The emitter tip and electron range formed by the silicide material is a predetermined distance away from an oxide film, therefore, the emission characteristic of the emitter is efficiently strengthened, and the leakage current is, thereby, reduced due to the prevention of the metallic contamination to the insulating layers.