Abstract: A method for reducing surface tension of polymer material by decompression effect includes step as follows. A decompression step is performed, wherein a polymer material is placed at a low pressure environment to reduce a surface tension of the polymer material, and a pressure of the low pressure environment is lower than 105 Pa.

Abstract: The invention provides a self-organized quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a semiconductor mechanism of etching back and thermal oxidation, implemented on a semiconductor-alloyed layer set on the insulative layer; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands based on the semiconductor mechanism, the quantum dots and the silicon dioxide spacer islands adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode self-alignment to the quantum dot.

Abstract: A topical subcutaneous microcirculation detection device includes a first light source module, a second light source module, a lens plate, a first light sensor, and a second light sensor. The first and second light source modules are configured to emit first and second illumination beams, respectively. A flat plate portion of the lens plate is disposed to lean against a first portion of skin of a subject. A convex surface of a first convex lens portion of the lens plate is disposed to push into a second portion of the skin of the subject. The first and second illumination beams are reflected into first and second reflected beams by the first and second portions of the skin, respectively. The first and second reflected beams are transmitted to the first and second light sensors, respectively.

Abstract: A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.

Abstract: A fault detection method, includes the following steps. A target sequence is received, the target sequence includes several data. A first moving average operation is performed on the target sequence to establish a first moving average sequence. A second moving average operation is performed on the target sequence to establish a second moving average sequence. A difference operation between the first moving average sequence and the second moving average sequence is performed to obtain a difference sequence, the difference sequence includes several difference values. An upper limit value is set. When one of the difference values is greater than the upper limit value, the target sequence is determines as abnormal.

Abstract: A fault detection method comprises the following steps. Receiving a first original sequence comprising a plurality of first data. Receiving a second original sequence comprising a plurality of second data. Aligning the first original sequence with the second original sequence according to trends of value changing of the first data and the second data. Performing an average operation on the aligned first original sequence and second original sequence to establish a standard sequence. Performing a difference operation between the first original sequence and the standard sequence to obtain a first total difference value. Performing a difference operation between the second original sequence and the standard sequence to obtain a second total difference value. When the first total difference value and/or the second total difference value is greater than an upper limit value, determining that the first original sequence and/or the second total difference value is abnormal.

Abstract: A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.

Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.

Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.

Abstract: A topical subcutaneous microcirculation detection device includes a first light source module, a second light source module, a lens plate, a first light sensor, and a second light sensor. The first and second light source modules are configured to emit first and second illumination beams, respectively. A flat plate portion of the lens plate is disposed to lean against a first portion of skin of a subject. A convex surface of a first convex lens portion of the lens plate is disposed to push into a second portion of the skin of the subject. The first and second illumination beams are reflected into first and second reflected beams by the first and second portions of the skin, respectively. The first and second reflected beams are transmitted to the first and second light sensors, respectively.

Abstract: The invention provides a self-organized quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a semiconductor mechanism of etching back and thermal oxidation, implemented on a semiconductor-alloyed layer set on the insulative layer; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands based on the semiconductor mechanism, the quantum dots and the silicon dioxide spacer islands adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode self-alignment to the quantum dot.

Abstract: The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

Abstract: The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

Abstract: A method and a system are provided for automatically delineating a striatum in a nuclear medicine brain image and calculating a striatum specific uptake ratio. In the method, initially, a target image is obtained. Then, the target image is projected to a space coordinate to generate a projection amount; an upper end and a lower end of a brain are obtained; and a preset range from the upper to the lower ends is set as a striatum slice area in the target image. A brain area is determined from the target image by a line detection method. Then, a brain volume template is deformed according to the brain area and the striatum slice area, so that a striatum in the brain volume template corresponds to the target image to delineate a striatum region of the target image. Finally, a specific uptake ratio of the striatum region can be calculated.

Abstract: A method and a system are provided for automatically delineating a striatum in a nuclear medicine brain image and calculating a striatum specific uptake ratio. In the method, initially, a target image is obtained. Then, the target image is projected to a space coordinate to generate a projection amount; an upper end and a lower end of a brain are obtained; and a preset range from the upper to the lower ends is set as a striatum slice area in the target image. A brain area is determined from the target image by a line detection method. Then, a brain volume template is deformed according to the brain area and the striatum slice area, so that a striatum in the brain volume template corresponds to the target image to delineate a striatum region of the target image. Finally, a specific uptake ratio of the striatum region can be calculated.

Abstract: Disclosed are a method, system and controller for simultaneously verifying amplitude and temperature parameters of an electrical-acoustic conversion device, including: inputting a sweep signal to the electrical-acoustic conversion device; testing the amplitude of the electrical-acoustic conversion device while adjusting the gain of the whole frequency band of the sweep signal until the maximum value of the tested amplitude is a maximum amplitude parameter Xmax, and testing the temperature of a voice coil at this moment; and if the tested temperature of the voice coil at this moment is higher or lower than Tmax, gradually reducing/increasing the gain of the sweep signal in the frequency band above a gain improvement frequency point until the tested temperature of the voice coil is Tmax, and then maintaining the gain of the sweep signal for a predetermined period of time and then testing the performance of the electrical-acoustic conversion device.

Abstract: Disclosed are a method, system and controller for simultaneously verifying amplitude and temperature parameters of an electrical-acoustic conversion device, including: inputting a sweep signal to the electrical-acoustic conversion device; testing the amplitude of the electrical-acoustic conversion device while adjusting the gain of the whole frequency band of the sweep signal until the maximum value of the tested amplitude is a maximum amplitude parameter Xmax, and testing the temperature of a voice coil at this moment; and if the tested temperature of the voice coil at this moment is higher or lower than Tmax, gradually reducing/increasing the gain of the sweep signal in the frequency band above a gain improvement frequency point until the tested temperature of the voice coil is Tmax, and then maintaining the gain of the sweep signal for a predetermined period of time and then testing the performance of the electrical-acoustic conversion device.

Abstract: The present invention discloses a combined structure of a piezoelectric receiver and an ultrasonic generator comprises a piezoelectric plate, an ultrasonic signal generator, an audio signal input circuit and a switching circuit, wherein the input end of the switching circuit is connected with the ultrasonic signal generator and the audio signal input circuit, respectively, so as to switch therebetween; and the output end of the switching circuit is connected with the piezoelectric plate. The technical effect of the present invention is that the piezoelectric receiver and the ultrasonic generator are combined, such that functions of the receiver and the ultrasonic generator can be achieved only through one piezoelectric plate, saving the cost and the space.

Abstract: A method and system for testing a temperature tolerance limit of a loudspeaker. The method includes: selecting a test signal, and determining a test output voltage as a rated voltage of the loudspeaker, so that the loudspeaker reaches a rated amplitude; determining a gain boosting frequency point according to a resonant frequency of the loudspeaker; performing a plurality of tests for the loudspeaker, and in each test controlling the test signal to maintain the gain constant in a frequency band lower than the gain boosting frequency point and increase the gain in a frequency band higher than the gain boosting frequency point, testing and recording a temperature of the loudspeaker till the loudspeaker fails, and recording a temperature at the time of the failure; and determining a highest temperature that is tolerable by the loudspeaker before the loudspeaker fails.

Abstract: A method and system for testing a temperature tolerance limit of a loudspeaker. The method includes: selecting a test signal, and determining a test output voltage as a rated voltage of the loudspeaker, so that the loudspeaker reaches a rated amplitude; determining a gain boosting frequency point according to a resonant frequency of the loudspeaker; performing a plurality of tests for the loudspeaker, and in each test controlling the test signal to maintain the gain constant in a frequency band lower than the gain boosting frequency point and increase the gain in a frequency band higher than the gain boosting frequency point, testing and recording a temperature of the loudspeaker till the loudspeaker fails, and recording a temperature at the time of the failure; and determining a highest temperature that is tolerable by the loudspeaker before the loudspeaker fails.