Patents by Inventor Kang-Ping LEE

Kang-Ping LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nano-twinned Cu—Ni alloy layer and method for manufacturing the same
    Patent number: 12037670
    Abstract: A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: July 16, 2024
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chih Chen, Kang-Ping Lee, Yu-I Chang, Yun-Hsuan Chen
  • NANO-TWINNED Cu-Ni ALLOY LAYER AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20230220517
    Abstract: A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.
    Type: Application
    Filed: March 30, 2022
    Publication date: July 13, 2023
    Inventors: Chih CHEN, Kang-Ping LEE, Yu-I CHANG, Yun-Hsuan CHEN
  • Nano-twinned copper layer with doped metal element, substrate comprising the same and method for preparing the same
    Patent number: 11560639
    Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: January 24, 2023
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chih Chen, Kang-Ping Lee
  • NANO-TWINNED COPPER LAYER WITH DOPED METAL ELEMENT, SUBSTRATE COMPRISING THE SAME AND METHOD FOR PREPARING THE SAME
    Publication number: 20220282389
    Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 8, 2022
    Inventors: Chih CHEN, Kang-Ping LEE