Patents by Inventor Kang-soo Chu
Kang-soo Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7846790Abstract: A method of fabricating a semiconductor device having multiple gate dielectric layers and a semiconductor device fabricated thereby, in which the method includes forming an isolation layer defining first and second active regions in a semiconductor substrate. A passivation layer is formed on the substrate having the isolation layer. A first patterning process is carried out that etches the passivation layer on the first active region to form a first opening exposing the first active region, and a first dielectric layer is formed in the exposed first active region. A second patterning process is carried out, which etches the passivation layer on the second active region to form a second opening exposing the second active region, and a second dielectric layer is formed in the exposed second active region.Type: GrantFiled: October 23, 2007Date of Patent: December 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Gun Kang, Kang-Soo Chu
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Patent number: 7726777Abstract: An inkjet print head and method of fabricating the same. The inkjet print head includes: a substrate having an ink-feed hole, an interlayer dielectric layer formed around the ink-feed hole on the substrate, at least one metal layer formed on the interlayer dielectric layer, and an anti-moisture part formed between the ink-feed hole and the at least one metal layer to prevent ink moisture in the ink-feed hole from contacting the at least one metal layer. The inkjet print head and the method of fabricating the same are capable of preventing problems such as de-lamination between layers, electrical short-circuit, circuit malfunction, and corrosion of a metal interconnection layer, since it is possible to prevent penetration of ink moisture from layers having absorbent characteristics into the metal interconnection layer, a logic region, or a pressure driving part.Type: GrantFiled: September 23, 2005Date of Patent: June 1, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Sik Min, Kang-Soo Chu, Young-Ung Ha
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Patent number: 7510969Abstract: In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.Type: GrantFiled: January 9, 2007Date of Patent: March 31, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Joo-won Lee, Kang-soo Chu, Jae-eun Park, Jong-ho Yang
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Patent number: 7394641Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.Type: GrantFiled: June 1, 2006Date of Patent: July 1, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-Jun Won, Kang-soo Chu, Weon-Hong Kim
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Publication number: 20080099856Abstract: A method of fabricating a semiconductor device having multiple gate dielectric layers and a semiconductor device fabricated thereby, in which the method includes forming an isolation layer defining first and second active regions in a semiconductor substrate. A passivation layer is formed on the substrate having the isolation layer. A first patterning process is carried out that etches the passivation layer on the first active region to form a first opening exposing the first active region, and a first dielectric layer is formed in the exposed first active region. A second patterning process is carried out, which etches the passivation layer on the second active region to form a second opening exposing the second active region, and a second dielectric layer is formed in the exposed second active region.Type: ApplicationFiled: October 23, 2007Publication date: May 1, 2008Inventors: Sung-Gun Kang, Kang-Soo Chu
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Publication number: 20070166885Abstract: In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.Type: ApplicationFiled: January 9, 2007Publication date: July 19, 2007Inventors: Joo-won Lee, Kang-soo Chu, Jae-eun Park, Jong-ho Yang
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Patent number: 7203052Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.Type: GrantFiled: April 24, 2006Date of Patent: April 10, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-Jun Won, Kang-soo Chu, Weon-Hong Kim
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Patent number: 7180190Abstract: In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.Type: GrantFiled: July 2, 2003Date of Patent: February 20, 2007Assignee: Samsung Electronics, Co., Ltd.Inventors: Joo-won Lee, Kang-soo Chu, Jae-eun Park, Jong-ho Yang
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Publication number: 20060215348Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.Type: ApplicationFiled: June 1, 2006Publication date: September 28, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok-Jun Won, Kang-soo Chu, Weon-Hong Kim
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Publication number: 20060187611Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.Type: ApplicationFiled: April 24, 2006Publication date: August 24, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok-Jun Won, Kang-soo Chu, Weon-Hong Kim
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Patent number: 7084076Abstract: A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.Type: GrantFiled: February 19, 2004Date of Patent: August 1, 2006Assignee: Samsung Electronics, Co., Ltd.Inventors: Jae-eun Park, Kang-soo Chu, Joo-won Lee, Jong-ho Yang
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Publication number: 20060103693Abstract: An inkjet print head and method of fabricating the same. The inkjet print head includes: a substrate having an ink-feed hole, an interlayer dielectric layer formed around the ink-feed hole on the substrate, at least one metal layer formed on the interlayer dielectric layer, and an anti-moisture part formed between the ink-feed hole and the at least one metal layer to prevent ink moisture in the ink-feed hole from contacting the at least one metal layer. The inkjet print head and the method of fabricating the same are capable of preventing problems such as de-lamination between layers, electrical short-circuit, circuit malfunction, and corrosion of a metal interconnection layer, since it is possible to prevent penetration of ink moisture from layers having absorbent characteristics into the metal interconnection layer, a logic region, or a pressure driving part.Type: ApplicationFiled: September 23, 2005Publication date: May 18, 2006Inventors: Jae-Sik Min, Kang-Soo Chu, Young-Ung Ha
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Patent number: 7042698Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.Type: GrantFiled: February 2, 2005Date of Patent: May 9, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-Jun Won, Kang-soo Chu, Weon-Hong Kim
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Publication number: 20060040510Abstract: Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.Type: ApplicationFiled: September 14, 2005Publication date: February 23, 2006Inventors: Joo-won Lee, Jae-eun Park, Jong-ho Yang, Kang-soo Chu
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Patent number: 6992019Abstract: Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.Type: GrantFiled: June 12, 2003Date of Patent: January 31, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Joo-won Lee, Jae-eun Park, Jong-ho Yang, Kang-soo Chu
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Patent number: 6989231Abstract: Provided is a method of forming a fine pattern, in which a silicon oxide layer is formed on a photoresist pattern and dry etching is performed on the resultant structure. According to the method, a photoresist pattern is formed on a material layer on which a fine pattern is to be formed, a silicon oxide layer is conformally deposited on the photoresist pattern without damaging the photoresist pattern, and dry etching is performed on a lower layer. During the dry etching, spacers are formed along the sidewalls of the photoresist pattern, and then, a polymer layer is formed on the photoresist pattern. Accordingly, it is possible to prevent the thinning of the photoresist pattern so that a desired pattern can be obtained, and further, to prevent striation or wiggling from occurring on the patterned material layer.Type: GrantFiled: June 3, 2003Date of Patent: January 24, 2006Assignee: Samsung Electronics, Co., Ltd.Inventors: Jae-eun Park, Kang-soo Chu, Joo-won Lee, Jong-ho Yang
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Publication number: 20050168910Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.Type: ApplicationFiled: February 2, 2005Publication date: August 4, 2005Inventors: Seok-Jun Won, Kang-soo Chu, Weon-Hong Kim
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Publication number: 20050146037Abstract: Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.Type: ApplicationFiled: December 29, 2004Publication date: July 7, 2005Inventors: Kang-soo Chu, Joo-won Lee, Jae-eun Park, Jong-ho Yang
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Publication number: 20050142781Abstract: Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.Type: ApplicationFiled: December 29, 2004Publication date: June 30, 2005Inventors: Kang-soo Chu, Joo-won Lee, Jae-eun Park, Jong-ho Yang
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Patent number: 6858533Abstract: Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.Type: GrantFiled: July 2, 2003Date of Patent: February 22, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Kang-soo Chu, J o-won Lee, Jae-eun Park, Jong-ho Yang