Abstract: A user interface device which receives a user instruction for controlling at least one electronic device, includes a camera configured to obtain an image of a user; and at least one processor configured to divide the obtained image into a plurality of regions, determine an area occupied by the user's hand in each of the divided regions, and recognize gesture of the user based on the area occupied by the user's hand, wherein the at least one processor may be further configured to determine a direction in which the user's wrist faces based on the obtained image, and divide the obtained image into the plurality of regions based on the direction of the user's wrist.

Abstract: A light-emitting diode (LED) lamp for a vehicle and a method of manufacturing the same use MID and magnetic induction technologies. The LED lamp includes a LED module, a housing accommodating the LED module, and a molded interconnect device (MID) electrode formed on a surface of the housing. The LED module may be mounted on the MID electrode by soldering using magnetic induction heating, the housing may be an injection molded product, and the MID electrode may be formed on the housing using a MID process.

Abstract: The heating wire structure for glass includes a sheet of glass in a vehicle having a battery located within the vehicle and configured to apply power to heating wires located on the glass according to a user request, the heating wires located in one direction on the glass and connected to terminals of the battery in series, vertical bars located at both ends of the glass so that the heating wires are connected to the vertical bars, antenna lines connected to the antenna, at least some of the antenna lines including intersection points formed by intersecting the heating wires, and a ceramic layer formed at intersecting areas between the heating wire lines and the antenna lines to be located between the heating wire lines and the antenna lines.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: A heating wire apparatus for a vehicle safety glass includes: a plurality of bus bars located at a periphery of the vehicle safety glass; a plurality of heating wires having a serial pattern between the plurality of bus bars; and a battery that applies a voltage to the plurality of heating wires.

Abstract: An embodiment piezoelectric element includes a piezoelectric composite layer including a polymer and a piezoelectric ceramic, a backing layer disposed on a rear surface of the piezoelectric composite layer and configured to limit vibration of the piezoelectric composite layer, and an adhesive layer bonding the piezoelectric composite layer and the backing layer.

Abstract: A vehicle and a method of controlling the vehicle are provided, and an aspect of the disclosure is to provide a sensor module that can significantly increase a sensor replacement cycle of a vehicle to suppress the consumption of time and money according to sensor replacement. The vehicle includes a sensor module having a plurality of sensors connected in parallel and a plurality of switches configured to selectively activate each of the plurality of sensors, and a controller configured to selectively turn on/turn off each of the plurality of switches to generate a control signal for selectively activating the plurality of sensors and transmit the generated control signal to the sensor module.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: A vehicle and a method of controlling the vehicle are provided, and an aspect of the disclosure is to provide a sensor module that can significantly increase a sensor replacement cycle of a vehicle to suppress the consumption of time and money according to sensor replacement. The vehicle includes a sensor module having a plurality of sensors connected in parallel and a plurality of switches configured to selectively activate each of the plurality of sensors, and a controller configured to selectively turn on/turn off each of the plurality of switches to generate a control signal for selectively activating the plurality of sensors and transmit the generated control signal to the sensor module.

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.

Abstract: The heating wire structure for glass includes a sheet of glass in a vehicle having a battery located within the vehicle and configured to apply power to heating wires located on the glass according to a user request, the heating wires located in one direction on the glass and connected to terminals of the battery in series, vertical bars located at both ends of the glass so that the heating wires are connected to the vertical bars, antenna lines connected to the antenna, at least some of the antenna lines including intersection points formed by intersecting the heating wires, and a ceramic layer formed at intersecting areas between the heating wire lines and the antenna lines to be located between the heating wire lines and the antenna lines.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: A heating wire apparatus for a vehicle safety glass includes: a plurality of bus bars located at a periphery of the vehicle safety glass; a plurality of heating wires having a serial pattern between the plurality of bus bars; and a battery that applies a voltage to the plurality of heating wires.

Abstract: An image sensor includes a separation impurity layer in a semiconductor layer and defining a photoelectric conversion region and a readout circuit region, a photoelectric conversion layer in the semiconductor layer of the photoelectric conversion region and surrounded by the separation impurity layer, a floating diffusion region spaced apart from the photoelectric conversion layer and in the semiconductor layer of the photoelectric conversion region, a transfer gate electrode between the photoelectric conversion layer and the floating diffusion region, and impurity regions in the semiconductor layer of the readout circuit region. When the photoelectric conversion layer is integrated with photo-charges, the separation impurity layer has a first potential level around the photoelectric conversion layer and a second potential level on a portion between the photoelectric conversion layer and the impurity regions of the readout circuit region. The second potential level is greater than the first potential level.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.

Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.

Abstract: An image sensor includes a separation impurity layer in a semiconductor layer and defining a photoelectric conversion region and a readout circuit region, a photoelectric conversion layer in the semiconductor layer of the photoelectric conversion region and surrounded by the separation impurity layer, a floating diffusion region spaced apart from the photoelectric conversion layer and in the semiconductor layer of the photoelectric conversion region, a transfer gate electrode between the photoelectric conversion layer and the floating diffusion region, and impurity regions in the semiconductor layer of the readout circuit region. When the photoelectric conversion layer is integrated with photo-charges, the separation impurity layer has a first potential level around the photoelectric conversion layer and a second potential level on a portion between the photoelectric conversion layer and the impurity regions of the readout circuit region. The second potential level is greater than the first potential level.