Abstract: A surface plasmon resonance imaging apparatus is provided. The surface plasmon resonance imaging apparatus includes a light irradiation unit configured to irradiate polarized light onto a metal coating film provided on one surface of a prism, a light modulator configured to spatially pattern-encode light reflected by the metal coating film and the prism, a light detector configured to detect a pattern-encoded light signal, obtained through pattern-encoding by the light modulator, as a spectral signal, a signal processor configured to spatially decode the spectral signal and analyze a decoded spectral signal to generate characteristic data of a sample provided on the metal coating film, and an output unit configured to output the characteristic data of the sample as a two-dimensional (2D) image.

Abstract: Provided is a Raman scattering measurement apparatus including a light source which emits light to smoke particles, a filter configured to block light which is incident to the smoke particles and passes through the particle and to allow Raman scattered light to pass therethrough, and a photodetector which detects the Raman scattered light passing through the filter in order to distinguish fire smoke generated due to a true fire from non-fire smoke generated due to daily life or industrial activity. The present invention also provides a fire determination apparatus including a unit which reads a Raman shift from Raman scattered light detected by the photodetector of the Raman scattering measurement apparatus, estimates a smoke component from the read Raman shift, and determines fire/non-fire from the estimated smoke component and a method thereof.

Abstract: The disclosure relates to a non-dispersive infrared (NDIR) gas sensor which detects the concentration of gas with a simple structure and method by manufacturing an optical waveguide with a gas-permeable polymer material instead of a conventional cavity or chamber type. An optical signal travels through the optical waveguide of gas-permeable polymer by total internal reflection, and the gas naturally penetrates the optical waveguide without the use of separate inlet and outlet openings, so that the optical signal and gas particles come into contact with each other within the optical waveguide. Since the optical signal detected by a photodetector at the other end of the optical waveguide after traveling while contacting the gas particles has properties changed according to the concentration of the gas which they have contacted in the optical waveguide, it is possible to measure the concentration of a specific gas from the detected optical signal.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A method for forming a T-gate of a metamorphic high electron mobility transistor is provided. The method includes sequentially laminating a plurality of resist films on a substrate; forming a T-shaped pattern in the laminated resist films using electron beam lithography; forming a gate metal layer on the substrate where the T-shaped pattern has been formed; attaching an adhesion member to the gate metal layer formed on a top surface of the laminated resist films and detaching the adhesion member to thereby remove the gate metal layer; and removing the laminated resist films.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.