Abstract: A method of manufacturing a coupler for an air suspension includes: preparing a topping cord sheet and a rubber band; connecting the topping cord sheet and the rubber band to each other by attaching the rubber band to an outer circumferential surface of the topping cord sheet; and vulcanizing an intermediately formed body made by the connecting of the topping cord sheet and the rubber band to each other.

Abstract: A method of manufacturing a coupler for an air suspension includes: preparing a topping cord sheet and a rubber band; connecting the topping cord sheet and the rubber band to each other by attaching the rubber band to an outer circumferential surface of the topping cord sheet; and vulcanizing an intermediately formed body made by the connecting of the topping cord sheet and the rubber band to each other.

Abstract: A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device includes a conductive structure that comprises: an upper conductive line arranged above and in electrical connection with a circuit component in a lower device layer through a via plug, wherein the upper conductive line extends laterally over the via plug; an interposing layer having a substantially uniform thickness arranged between the via plug and the upper conductive line, and extending laterally beyond a planar projection of the via plug, wherein the upper conductive line is in electrical connection with the via plug through the interposing layer; and an overlayer is disposed over the upper conductive line.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device includes a conductive structure that comprises: an upper conductive line arranged above and in electrical connection with a circuit component in a lower device layer through a via plug, wherein the upper conductive line extends laterally over the via plug; an interposing layer having a substantially uniform thickness arranged between the via plug and the upper conductive line, and extending laterally beyond a planar projection of the via plug, wherein the upper conductive line is in electrical connection with the via plug through the interposing layer; and an overlayer is disposed over the upper conductive line.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a conductive pattern, a first conductive layer, and a dielectric layer. The conductive pattern extends upwardly from the substrate. The conductive pattern has a hollow structure. The first conductive layer covers the conductive pattern. The dielectric layer at least covers the first conductive layer.

Abstract: A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.

Abstract: A method of manufacturing a coupler for an air suspension includes: preparing a topping cord sheet and a rubber band; connecting the topping cord sheet and the rubber band to each other by attaching the rubber band to an outer circumferential surface of the topping cord sheet; and vulcanizing an intermediately formed body made by the connecting of the topping cord sheet and the rubber band to each other.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device includes a conductive structure that comprises: an upper conductive line arranged above and in electrical connection with a circuit component in a lower device layer through a via plug, wherein the upper conductive line extends laterally over the via plug; an interposing layer having a substantially uniform thickness arranged between the via plug and the upper conductive line, and extending laterally beyond a planar projection of the via plug, wherein the upper conductive line is in electrical connection with the via plug through the interposing layer; and an overlayer is disposed over the upper conductive line.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a conductive pattern, a support structure, a first conductive layer, and a dielectric layer. The conductive pattern extends vertically from the substrate. The support structure extends from an outer sidewall of the conductive pattern. The first conductive layer covers the conductive pattern. The dielectric layer at least covers the first conductive layer and the support structure.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The structure comprises: a substrate having a device region; a contact plug arranged over the device region and enables electrical connection to a semiconductor device in the device region; a separation layer arranged above and exposing the contact plug; a cylindrical tubular metal feature arranged above the separation layer; and a dielectric layer laterally surrounding the cylindrical tubular conductive feature, having a substantially stepped dopant concentration distribution comprised of two distinct dopant species. The dopant concentration level decreases from a lower region nearest the separation layer toward an upper region farther from the separation layer. An inter-dopant ratio between the distinct dopant species increases from the lower region toward the upper region. The cylindrical tubular metal feature has a sidewall profile that is substantially perpendicular to a surface of the substrate.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor structure includes an interconnect structure that comprises: a plurality of conductive features over a substrate arranged separately adjacent one another; a liner conformally formed over and between the plurality of conductive features and defining a trench having a first depth between adjacent pair of the conducive features, wherein a horizontal coverage of the liner over respective top surfaces of the conductive features has thickness lower than that of a vertical coverage over respective sidewalls of the conductive features; and a dielectric layer on the liner over top surfaces of the conductive features, wherein the dielectric layer seals the respective trench and forms a void between adjacent pair of the conductive features.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The structure comprises: a substrate having a device region; a contact plug arranged over the device region and enables electrical connection to a semiconductor device in the device region; a separation layer arranged above and exposing the contact plug; a cylindrical tubular metal feature arranged above the separation layer; and a dielectric layer laterally surrounding the cylindrical tubular conductive feature, having a substantially stepped dopant concentration distribution comprised of two distinct dopant species. The dopant concentration level decreases from a lower region nearest the separation layer toward an upper region farther from the separation layer. An inter-dopant ratio between the distinct dopant species increases from the lower region toward the upper region. The cylindrical tubular metal feature has a sidewall profile that is substantially perpendicular to a surface of the substrate.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a conductive pattern, a first conductive layer, and a dielectric layer. The conductive pattern extends upwardly from the substrate. The conductive pattern has a hollow structure. The first conductive layer covers the conductive pattern. The dielectric layer at least covers the first conductive layer.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor structure includes an interconnect structure that comprises: a plurality of conductive features over a substrate arranged separately adjacent one another; a liner conformally formed over and between the plurality of conductive features and defining a trench having a first depth between adjacent pair of the conducive features, wherein a horizontal coverage of the liner over respective top surfaces of the conductive features has thickness lower than that of a vertical coverage over respective sidewalls of the conductive features; and a dielectric layer on the liner over top surfaces of the conductive features, wherein the dielectric layer seals the respective trench and forms a void between adjacent pair of the conductive features.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a conductive pattern, a support structure, a first conductive layer, and a dielectric layer. The conductive pattern extends vertically from the substrate. The support structure extends from an outer sidewall of the conductive pattern. The first conductive layer covers the conductive pattern. The dielectric layer at least covers the first conductive layer and the support structure.

Abstract: The instant disclosure includes a semiconductor processing chamber. The semiconductor processing chamber includes a lid, a body, and a gasket. The gasket has a sealing portion and at least one handle portion protruding from the sealing portion. The at least one handle portion is used for applying force to the gasket during replacement process.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device comprises: an electrical device disposed in a device layer over a substrate; a cross-layer component that forms at least part of a vertical signal path to the electrical device, the cross-layer component including an inner conductor including an upper, a lateral, and a bottom boundary, having an aspect ratio exceeding 1; and an intra-layer component arranged in a layer over the device layer and above the cross-layer component, the intra-layer component including: a conductive line extending laterally over the inner conductor of the cross-layer component; and an intermetallic layer that includes an intermetallic material with substantially unitary molecular constitution, arranged under the conductive line and extending laterally beyond a planar projection of the cross-layer component, wherein the upper boundary of the inner conductor is in contact with the intermetallic layer.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device includes a conductive structure that comprises: an upper conductive line arranged above and in electrical connection with a circuit component in a lower device layer through a via plug, wherein the upper conductive line extends laterally over the via plug; an interposing layer having a substantially uniform thickness arranged between the via plug and the upper conductive line, and extending laterally beyond a planar projection of the via plug, wherein the upper conductive line is in electrical connection with the via plug through the interposing layer; and an overlayer is disposed over the upper conductive line.

Abstract: A method for manufacturing interconnect structure is disclosed. The method comprises forming a plurality of interconnect features on a surface apart from each other so as to define at least a trench there-between; and performing a physical vapor deposition process using a dielectric material to cover top surfaces of the plurality of interconnect features and seal the at least one trench to form at least one void, wherein the dielectric material includes at least one arch-shaped surface that connects side wall surfaces defining the corresponding trench and defines a concave that opens toward the corresponding void.