Abstract: Systems, methods, and apparatuses for atomic-scale materials processing based on electron beam induced etching assisted by remote plasma are disclosed. For example, a method may include placing the substrate into a low-pressure chamber to which an electron source is connected. The method may also include contacting the surface of the substrate with reactive particle fluxes produced by a remote plasma source connected to the low-pressure chamber. The remote plasma source may be fed with one or more chemical precursors for surface chemical functionalization of the surface of the substrate. The method may further include electron irradiation of the surface of the substrate with electrons via the electron source at a specified energy level to induce a surface chemical process on the surface of the substrate.

Abstract: Provided is a method of selectively etching a substrate comprising at least one cycle of: depositing a chemical precursor on a surface of the substrate to form a chemical precursor layer on the substrate, the substrate comprising a first portion and a second portion, wherein the first and the second portion are of a different composition; selectively removing the chemical precursor layer and at least a part of the first portion of the substrate; and repeating the cycle until the first portion of the substrate is substantially or completely removed, wherein deposition of the chemical precursor and selective removal of the chemical precursor layer and at least a part of the first portion of the substrate are performed under a plasma environment.

Abstract: Provided is a method of selectively etching a substrate comprising at least one cycle of: depositing a chemical precursor on a surface of the substrate to form a chemical precursor layer on the substrate, the substrate comprising a first portion and a second portion, wherein the first and the second portion are of a different composition; selectively removing the chemical precursor layer and at least a part of the first portion of the substrate; and repeating the cycle until the first portion of the substrate is substantially or completely removed. wherein deposition of the chemical precursor and selective removal of the chemical precursor layer and at least a part of the first portion of the substrate are performed under a plasma environment.

Abstract: Provided is a method of selectively etching a substrate including at least one cycle of: depositing a chemical precursor on a surface of the substrate, the substrate including a first portion and a second portion, to selectively form a chemical precursor layer on a surface of the first portion of the substrate without forming or substantially without forming the chemical precursor layer on a surface of the second portion of the substrate, wherein the first portion of the substrate and the second portion of the substrate are of different composition; exposing the chemical precursor layer on the surface of the first portion of the substrate and the surface of the second portion of the substrate to a plasma environment subjected to a bias power; and selectively and in a self-limited fashion removing at least a part of the second portion of the substrate, and repeating the cycle until the second portion of the substrate is substantially or completely removed.

Abstract: A multi-functional composition including high aspect boron nitride particles providing improved properties such as thermal conductivity, electrical insulation, barrier to moisture, vapor, and gasses, lubrication, friction modification, optical properties, suspension stability, and a system and method for forming such compositions. The high boron nitride particles have an average aspect ratio greater than 300. The multifunctional composition may comprise of a polymer material, fluids, metals, ceramics, glasses, other non-BN fillers and the high aspect ratio boron nitride. Also provided are methods for making such boron nitride particles and compositions.

Abstract: A thermally conductive filler composition and a resin composition comprising such filler compositions. The filler composition comprises a blend of a boron nitride, a graphite, or a combination thereof, a talc, and optionally a silane. The filler composition can further comprise other filler components including, for example, wollastonite, calcium carbonate, or a combination thereof. The filler compositions can be added to a resin composition to provide a thermally conductive resin such as, for example, a thermally conductive plastic.

Abstract: A composition comprising exfoliated boron nitride crystals dispersed in a resin matrix and a method of forming such compositions comprises the in situ exfoliation of boron nitride crystals by compounding boron nitride crystals in a resin material with a hard filler material having a hardness greater than the hardness of the boron nitride crystals.