Patents by Inventor Kangjie Li

Kangjie Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for a combination of high boron and low boron BPSG top clad fabrication process for a planar lightwave circuit
    Patent number: 6553170
    Abstract: A method of depositing a dual layer top clad for an optical waveguide of a planar lightwave circuit (PLC). The method includes a first step of providing a high flow rate of a Boron dopant gas for a first top cladding layer deposition process. Then, a low flow rate of a Boron dopant gas is provided for a second top cladding layer deposition process. The second top cladding layer deposition process is performed directly on the first top cladding layer deposition. The first and second top cladding layer deposition processes are combined to form a dual layer top clad of the PLC having a high Boron portion covering a plurality of optical cores and a low Boron portion covering the first portion. The first top cladding layer deposition process can comprises three deposition and anneal cycles using the high flow rate for the Boron dopant gas. The three deposition and anneal cycles are used to fill gaps between the plurality of optical cores of the PLC.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: April 22, 2003
    Assignee: Lightwave Microsystems Corporation
    Inventors: Fan Zhong, Kangjie Li
  • METHOD AND SYSTEM FOR A COMBINATION OF HIGH BORON AND LOW BORON BPSG TOP CLAD FABRICATION PROCESS FOR A PLANAR LIGHTWAVE CIRCUIT
    Publication number: 20030044151
    Abstract: A method of depositing a dual layer top clad for an optical waveguide of a planar lightwave circuit (PLC). The method includes a first step of providing a high flow rate of a Boron dopant gas for a first top cladding layer deposition process. Then, a low flow rate of a Boron dopant gas is provided for a second top cladding layer deposition process. The second top cladding layer deposition process is performed directly on the first top cladding layer deposition. The first and second top cladding layer deposition processes are combined to form a dual layer top clad of the PLC having a high Boron portion covering a plurality of optical cores and a low Boron portion covering the first portion. The first top cladding layer deposition process can comprises three deposition and anneal cycles using the high flow rate for the Boron dopant gas. The three deposition and anneal cycles are used to fill gaps between the plurality of optical cores of the PLC.
    Type: Application
    Filed: August 31, 2001
    Publication date: March 6, 2003
    Inventors: Fan Zhong, Kangjie Li